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參數(shù)資料
| 型號(hào)： | S29GL064M90FCIR83 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 256,128,64,32，3.0兆伏安只頁(yè)面模式閃存具有0.23レ米MirrorBit工藝技術(shù) |
| 文件頁(yè)數(shù)： | 62/116頁(yè) |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90FCIR83 |
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60
S29GL-M MirrorBit
TM
Flash Family
S29GL-M_00_B6 October 10, 2006
D a t a S h e e t
Command Definitions
Writing specific address and data commands or sequences into the command register initiates
device operations.
Table 34
and
Table 35
define the valid register command sequences.
Writing
incorrect address and data values or writing them in the improper sequence may place the device
in an unknown state.
A reset command is then required to return the device to reading array data.
All addresses are latched on the falling edge of WE# or CE#, whichever happens later. All data is
latched on the rising edge of WE# or CE#, whichever happens first. See
AC Characteristics
for
timing diagrams.
Reading Array Data
The device is automatically set to reading array data after device power-up. No commands are
required to retrieve data. The device is ready to read array data after completing an Embedded
Program or Embedded Erase algorithm.
After the device accepts an Erase Suspend command, the device enters the erase-suspend-read
mode, after which the system can read data from any non-erase-suspended sector. After com-
pleting a programming operation in the Erase Suspend mode, the system may once again read
array data with the same exception. See
Erase Suspend/Erase Resume Commands
for more
information.
The system
must
issue the reset command to return the device to the read (or erase-suspend-
read) mode if DQ5 goes high during an active program or erase operation, or if the device is in
the autoselect mode. See the next section, Reset Command, for more information.
See also
Requirements for Reading Array Data
in the Device Bus Operations section for more in-
formation. The Read-Only Operations–
AC Characteristics
provides the read parameters, and
Figure 13
shows the timing diagram.
Reset Command
Writing the reset command resets the device to the read or erase-suspend-read mode. Address
bits are don’t cares for this command.
The reset command may be written between the sequence cycles in an erase command sequence
before erasing begins. This resets the device to the read mode. Once erasure begins, however,
the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in a program command se-
quence before programming begins. This resets the device to the read mode. If the program
command sequence is written while the device is in the Erase Suspend mode, writing the reset
command returns the device to the erase-suspend-read mode. Once programming begins, how-
ever, the device ignores reset commands until the operation is complete.
The reset command may be written between the sequence cycles in an autoselect command se-
quence. Once in the autoselect mode, the reset command must be written to return to the read
mode. If the device entered the autoselect mode while in the Erase Suspend mode, writing the
reset command returns the device to the erase-suspend-read mode.
If DQ5 goes high during a program or erase operation, writing the reset command returns the
device to the read mode (or erase-suspend-read mode if the device was in Erase Suspend).
Note that if DQ1 goes high during a Write Buffer Programming operation, the system must write
the Write-to-Buffer-Abort Reset command sequence to reset the device for the next operation.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TAIR32 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR33 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR40 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR42 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR43 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90FFIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR00 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TAIR3 | 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP |
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