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參數(shù)資料
| 型號： | S29GL064M90FCIR83 |
| 廠商： | Spansion Inc. |
| 英文描述： | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| 中文描述： | 256,128,64,32，3.0兆伏安只頁面模式閃存具有0.23レ米MirrorBit工藝技術(shù) |
| 文件頁數(shù)： | 59/116頁 |
| 文件大?。?/td> | 1656K |
| 代理商： | S29GL064M90FCIR83 |
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October 10, 2006 S29GL-M_00_B6
S29GL-M MirrorBit
TM
Flash Family
57
D a t a S h e e t
Common Flash Memory Interface (CFI)
The Common Flash Interface (CFI) specification outlines device and host system software inter-
rogation handshake, which allows specific vendor-specified software algorithms to be used for
entire families of devices. Software support can then be device-independent, JEDEC ID-indepen-
dent, and forward- and backward-compatible for the specified flash device families. Flash vendors
can standardize their existing interfaces for long-term compatibility.
This device enters the CFI Query mode when the system writes the CFI Query command, 98h, to
address 55h, any time the device is ready to read array data. The system can read CFI informa-
tion at the addresses given in
Table 30
through
Table 33
. To terminate reading CFI data, the
system must write the reset command.
The system can also write the CFI query command when the device is in the autoselect mode.
The device enters the CFI query mode, and the system can read CFI data at the addresses given
in
Table 30
through
Table 33
. The system must write the reset command to return the device to
reading array data.
For further information, please refer to the CFI Specification and CFI Publication 100. Alterna-
tively, contact your sales representative for copies of these documents.
Note:
CFI data related to VCC and time-outs may differ from actual VCC and time-outs of the product. Please consult the
Ordering Information tables to obtain the VCC range for particular part numbers. See the
Erase and Programming
Performance
table for typical timeout specifications.
Table 30. CFI Query Identification String
Addresses( x16)
Addresses( x8)
Data
Description
10h
11h
12h
20h
22h
24h
0051h
0052h
0059h
Query Unique ASCII string “QRY”
13h
14h
26h
28h
0002h
0000h
Primary OEM Command Set
15h
16h
2Ah
2Ch
0040h
0000h
Address for Primary Extended Table
17h
18h
2Eh
30h
0000h
0000h
Alternate OEM Command Set (00h = none exists)
19h
1Ah
32h
34h
0000h
0000h
Address for Alternate OEM Extended Table
(00h = none exists)
Table 31. System Interface String
Addresses ( x16)
Addresses ( x8)
Data
Description
1Bh
36h
0027h
V
Min. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Ch
38h
0036h
V
Max. (write/erase)
D7–D4: volt, D3–D0: 100 millivolt
1Dh
3Ah
0000h
V
PP
Min. voltage (00h = no V
PP
pin present)
1Eh
3Ch
0000h
V
PP
Max. voltage (00h = no V
PP
pin present)
1Fh
3Eh
0007h
Reserved for future use
20h
40h
0007h
Typical timeout for Min. size buffer write 2
N
μs
(00h = not supported)
21h
42h
000Ah
Typical timeout per individual block erase 2
N
ms
22h
44h
0000h
Typical timeout for full chip erase 2
N
ms
(00h = not supported)
23h
46h
0001h
Reserved for future use
24h
48h
0005h
Max. timeout for buffer write 2
N
times typical
25h
4Ah
0004h
Max. timeout per individual block erase 2
N
times typical
26h
4Ch
0000h
Max. timeout for full chip erase 2
N
times typical
(00h = not supported)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| S29GL064M90TAIR32 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR33 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR40 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR42 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
| S29GL064M90TAIR43 | 256,128,64,32,Megabit 3.0 Volt-only Page Mode Flash Memory featuring 0.23 レm MirrorBit Process Technology |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| S29GL064M90FFIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR00 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8 90ns 48-Pin TSOP Tray |
| S29GL064M90TAIR2 | 制造商:Spansion 功能描述: |
| S29GL064M90TAIR20 | 制造商:Spansion 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 90ns 56-Pin TSOP Tray |
| S29GL064M90TAIR3 | 制造商:Spansion 功能描述:NOR Flash, 4M x 16, 48 Pin, Plastic, TSSOP |
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