參數(shù)資料
型號(hào)： PXA250
廠商： Intel Corp.
英文描述： Intel-R PXA250 and PXA210 Applications Processors
中文描述： 英特爾- R的PXA250和PXA210應(yīng)用處理器
文件頁(yè)數(shù)： 40/46頁(yè)
文件大?。?/td> 431K
代理商： PXA250
PXA250 and PXA210
—
Electrical, Mechanical, and Thermal Specification
40
Datasheet
tromDSWH
MD(31:0), DQM(3:0) write data setup to
nWE deasserted
20
17
15
13.6
12
ns, 2
tromDH
MD(31:0), DQM(3:0) write data hold
after nWE deasserted
10
8.5
7.5
6.8
6
ns, 1
tromNWE
nWE high time between beats of write
data
20
17
15
13.6
12
ns, 2
NOTES:
1. This number represents 1 MEMCLK period
2. This number represents 2 MEMCLK periods
3. This number represents 3 MEMCLK periods
Table 18. Variable Latency I/O Interface AC Specifications
Symbol
Description
MEMCLK Frequency (MHz)
Units,
Notes
99.5
118.0
132.7
147.5
165.9
tvlioAS
MA(25:0) setup to nCS asserted
10
8.5
7.5
6.8
6
ns, 1
tvlioASRW
MA(25:0) setup to nOE or nPWE
asserted
10
8.5
7.5
6.8
6
ns, 1
tvlioAH
MA(25:0) hold after nOE or nPWE
deasserted
10
8.5
7.5
6.8
6
ns, 1
tvlioCES
nCS setup to nOE or nPWE asserted
20
17
15
13.6
12
ns, 2
tvlioCEH
nCS hold after nOE or nPWE
deasserted
10
8.5
7.5
6.8
6
ns, 1
tvlioDSW
MD(31:0), DQM(3:0) write data setup to
nPWE asserted
10
8.5
7.5
6.8
6
ns, 1
tvlioDSWH
MD(31:0), DQM(3:0) write data setup to
nPWE deasserted
20
17
15
13.6
12
ns, 2
tvlioDHW
MD(31:0), DQM(3:0) hold after nPWE
deasserted
10
8.5
7.5
6.8
6
ns, 1
tvlioDHR
MD(31:0) read data hold after nOE
deasserted
0
0
0
0
0
ns
tvlioRDYH
RDY hold after nOE, nPWE deasserted
0
0
0
0
0
ns
tvlioNPWE
nPWE, nOE high time between beats of
write or read data
20
17
15
13.6
12
ns, 2
NOTES:
1. This number represents 1 MEMCLK period
2. This number represents 2 MEMCLK periods
Table 17. SRAM / ROM / Flash / Synchronous Fast Flash AC Specifications (Sheet 2 of 2)
Symbol
Description
MEMCLK Frequency (MHz)
Units,
Notes
99.5
118.0
132.7
147.5
165.9
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