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參數(shù)資料
| 型號： | PTF080901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 7/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | PTF080901E |
Data Sheet
7
2004-04-05
PTF080901
Reference Circuit
1
(not to scale)
Component
C1, C9, C11, C18,
C20
C2, C10, C19
C3, C4, C7, C15,
C16
C5
C6
C8, C17
C12
C13
C14
C21, C22, C23
L1, L2
Q1
QQ1
R1
R2
R3
R4
R5
R6
R7
Description
Capacitor, 10 μF, 35 V
Manufacturer
Digi-Key
P/N or Comment
Tantalum TE Series SMD
PCS6106TR-ND
P4525-ND
100B 330
Capacitor, 0.1 μF, 50 V
Capacitor, 33 pF
Digi-Key
ATC
Capacitor, 4.3 pF
Capacitor, 6.2 pF
Capacitor, 1 μ, 50 V
Capacitor, 2.2 pF
Capacitor, 1.4 pF
Capacitor, 0.5 pF
Capacitor, 0.001 μF, 50 V, 0603
Ferrite, 6 mm
Transistor
Voltage Regulator
Resistor, 10 ohms, 1/4 W, 1206
Resistor, 5.1 k-ohms, 1/4 W, 1206
Resistor, 1.2 k-ohms, 1/10 W, 0603
Resistor, 1.3 k-ohms, 1/10 W, 0603
Resistor, Variable, 10 k-ohms, 1/4 W
Resistor, 22 k-ohms, 1/10 W, 0603
Resistor, 3.3 k-ohms, 1/4 W, 1206
ATC
ATC
Digi-Key
ATC
ATC
ATC
Digi-Key
Philips
Infineon
National Semiconductor
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
Digi-Key
100B 4R3
100B 6R2
19528-ND
100B 2R2
100B 1R4
100B 0R5
PCC1772CT-ND
53/3/4.6-452
BCP56
LM7805
P10ECT-ND
P5.1KECT-ND
P1.2KGCT-ND
P1.3KGCT-ND
3224W-103ETR-ND
P22KGCT-ND
P3.3KECT-ND
1
Gerber files for this circuit are available on request.
Test Circuit
(cont.)
R1 R2
080901_assy
C4
C5
C1
3
1
C2
+
C15
C14
C19
L2
C16
C17
C6
C13
C18
C20
C8
C7
C12
C9
L1
C10
C11
RF_OUT
RF_IN
V
GS
V
DD
V
DD
C23
C21
LM
R3
R4
R7
R5
R6
C3
QQ1
C22
Q1
1
1
3
+
+
1
3
+
1
3
1
3
+
5
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF10007 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10009 | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| PTF10015 | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
| PTF081301EF-03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
| PTF081301F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
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