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參數(shù)資料
| 型號： | PTF10007 |
| 廠商： | ERICSSON |
| 英文描述： | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 35瓦，1.0 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 235K |
| 代理商： | PTF10007 |
1
PTF 10007
35 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
0
10
20
30
40
50
0
1
2
3
Input Power (Watts)
O
0
20
40
60
80
100
E
V
DD
= 28 V
I
DQ
= 300 mA
f = 960 MHz
Typical Output Power & Efficiency
vs. Input Power
Output Pow er (W)
Efficiency (%)
Package
20222
Description
The PTF 10007 is a 35 Watt GOLDMOS FET intended for large
signal amplifier applications to 1.0 GHz. It operates at 55% efficiency
and 13.5 dB of gain. Nitride surface passivation and gold
metallization ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 35 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% lot traceability
Available in Package 20235 as PTF 10052
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
60
Vdc
Gate-Source Voltage
V
GS
±20
Vdc
Operating Junction Temperature
T
J
200
°C
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
120
0.7
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
JC
1.4
°C/W
Package
20235
A-1234569723
A1234569999
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10009 | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| PTF10015 | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10020 | 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10021 | 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10009 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| PTF10009SP | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10015 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 制造商:ASI 制造商全稱:ASI 功能描述:MOS FIELD EFFECT TRANSISTOR |
| PTF10020 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
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