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參數(shù)資料
| 型號： | PTF10009 |
| 廠商： | ERICSSON |
| 英文描述： | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| 中文描述： | 85瓦，1.0 GHz的GOLDMOS⑩場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 228K |
| 代理商： | PTF10009 |
e
1
PTF 10009
85 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
1234569744
0
10
20
30
40
50
60
70
80
90
100
0.0
1.0
2.0
3.0
4.0
5.0
Input Power (Watts)
O
0
8
16
24
32
40
48
56
64
72
80
E
V
DS
= 28 V
I
DQ
= 600 mA Total
f = 960 MHz
Typical Output Power and Efficiency vs. Input Power
Efficiency (%)
Output Power (W)
Package 20230
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.0 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% lot traceability
Description
The PTF 10009 is an 85 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 50% efficiency and
13.0 dB of gain. Nitride surface passivation and full gold metallization
are used to ensure excellent device lifetime and reliability.
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
(1)
V
DSS
65
Vdc
Gate-Source Voltage
(1)
V
GS
±20
Vdc
Operating Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
P
D
270
1.54
Watts
W/°C
Storage Temperature Range
T
STG
-65 to 150
°C
Thermal Resistance (T
CASE
= 70°C)
R
q
JC
0.65
°C/W
(1)
per side
All published data at T
CASE
= 25°C unless otherwise indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10015 | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10020 | 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10021 | 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10031 | 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10009SP | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10015 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 制造商:ASI 制造商全稱:ASI 功能描述:MOS FIELD EFFECT TRANSISTOR |
| PTF10020 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10021 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
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