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參數(shù)資料
| 型號(hào)： | PTF10021 |
| 廠商： | ERICSSON |
| 英文描述： | 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 30瓦，1.4-1.6 GHz的GOLDMOS場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 278K |
| 代理商： | PTF10021 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 360 mA, f = 1.5 GHz)
Power Output at 1 dB Compressed
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 360 mA, f = 1.5 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W(PEP), I
DQ
= 360 mA, f = 1.5 GHz—
all phase angles at frequency of test)
G
ps
11.0
13.0
—
dB
P-1dB
30
—
—
Watts
h
45
48
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 Volts
- Output Power = 30 Watts Min
- Power Gain = 13 dB Typ
- Efficiency = 48% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
PTF 10021
30 Watts, 1.4–1.6 GHz
GOLDMOS
Field Effect Transistor
10021
0
10
20
30
40
0
1
2
3
4
5
Input Power (Watts)
O
V
DD
= 28 V
I
DQ
= 360 mA
f = 1.5 GHz
Typical Output Power vs. Input Power
Package 20237
Description
The PTF 10021 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications in the 1.4 to 1.6 GHz range such as DAB/DAR. It is
rated at 30 watts power output. Nitride surface passivation and full
gold metallization ensure excellent device lifetime and reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10031 | 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10043 | 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10045 | 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10031 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10041 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10043 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10045 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
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