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參數(shù)資料
| 型號： | PTF10036 |
| 廠商： | ERICSSON |
| 英文描述： | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 85瓦，860-960兆赫GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 220K |
| 代理商： | PTF10036 |
1
e
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 800 mA Total, f = 900 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 800 mA Total, f = 900 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 85 W(PEP), I
DQ
= 800 mA Total,
f = 867, 867.1 MHz—all phase angles at frequency of test)
G
ps
11.0
12.5
—
dB
P-1dB
85
90
—
Watts
h
50
55
—
%
Y
—
—
3:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10036
85 Watts, 860–960 MHz
GOLDMOS
Field Effect Transistor
0
20
40
60
80
100
0
1
2
3
4
5
6
Input Power (Watts)
O
10
20
30
40
50
60
E
V
DD
= 28 V
I
DQ
= 800 mA Total
f = 960 MHz
Typical Output Power vs. Input Power
Output Power
Efficiency (%)
Package 20240
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
A-1234569744
Description
The PTF 10036 is an internally matched, 85 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10043 | 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10045 | 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| PTF10052 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10053 | 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10041 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10043 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10045 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| PTF10052 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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