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參數(shù)資料
| 型號(hào)： | PTF10043 |
| 廠(chǎng)商： | ERICSSON |
| 英文描述： | 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 12瓦，1.9-2.0 GHz的GOLDMOS場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 235K |
| 代理商： | PTF10043 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 3 W, I
DQ
= 150 mA, f = 1.93, 2.0 GHz)
Power Output at 1 dB Compressed
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 12 W, I
DQ
= 150 mA, f = 2.0 GHz
—all phase angles at frequency of test)
G
ps
11
12
—
dB
p-1dB
12
14
—
Watts
D
40
45
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
INTERNALLY MATCHED
Performance at 2.0 GHz, 26 Volts
- Output Power = 12 Watts Min
- Power Gain = 12 dB Typ at 3 Watts
- Efficiency = 45% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
PTF 10043
12 Watts, 1.9–2.0 GHz
GOLDMOS
Field Effect Transistor
A1234569834
0
4
8
12
16
20
0.0
0.2
0.4
0.6
0.8
1.0
Input Power (Watts)
O
V
DD
= 26 V
I
DQ
= 150 mA
f = 2.0 GHz
Typical Output Power vs. Input Power
Package 20222
Description
The PTF 10043 is an internally matched
GOLDMOS
FET intended
for large signal amplifier applications from 1.9 to 2.0 GHz. Rated at
12 watts, it operates at 45% efficiency with 12 dB gain. Nitride sur-
face passivation and full gold metallization ensure excellent device
lifetime and reliability.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10045 | 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| PTF10052 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10053 | 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10065 | 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10045 | 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
| PTF10048 | 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| PTF10052 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10053 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類(lèi)型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類(lèi)型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10065 | 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
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