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參數(shù)資料
| 型號(hào)： | PTF10065 |
| 廠商： | ERICSSON |
| 英文描述： | 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 30瓦，1.93-1.99 GHz的GOLDMOS場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 94K |
| 代理商： | PTF10065 |
1
PTF 10065
30 Watts, 1.93–1.99 GHz
GOLDMOS
Field Effect Transistor
10065
1234569921A
Package 20237
0
10
20
30
40
0
1
2
3
Input Power (Watts)
O
0
10
20
30
40
50
60
70
80
E
V
DD
= 28 V
I
DQ
= 380 mA
f = 1.99 GHz
Output Power and Efficiency vs. Input Power
Output Power
Efficiency
Description
The PTF 10065 is a 30–watt
GOLDMOS
FET intended for PCS
amplifier applications from 1.93 to 1.99 GHz. It typically operates with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 30 Watts Min
- Power Gain = 11.0 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.93, 1.99 GHz)
ACPR (40 Walsh Codes)
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
G
ps
—
11.0
—
dB
±885 KHz
ACPR
±1.98 MHz
ACPR
- 50
—
—
dBc
(V
DD
= 28 V, P
OUT
= 3 W(CDMA), I
DQ
= 380 mA, f = 1.99 GHz)
Gain Flatness
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.930–1.990 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 3 W, I
DQ
= 380 mA, f = 1.99 GHz)
- 62
—
—
dBc
G f
—
—
0.7
dB
D
9
—
—
%
All published data at T
CASE
= 25°C unless otherwise indicated.
(table continues next page)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10100 | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10111 | 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10100 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10111 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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