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參數(shù)資料
| 型號： | PTF10107 |
| 廠商： | ERICSSON |
| 英文描述： | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 5瓦，2.0 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 83K |
| 代理商： | PTF10107 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 1.93, 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 70 mA, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 5 W, I
DQ
= 70 mA, f = 1.99 GHz
—all phase angles at frequency of test)
G
ps
11
—
—
dB
P-1dB
5
6.5
—
Watts
D
40
—
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10107
5 Watts, 2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20244
0
1
2
3
4
5
6
7
8
0.0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
O
0
20
40
60
80
100
E
X
V
DD
= 26 V
I
DQ
= 70 mA
f = 2.0 GHz
Typical Output Power & Efficiency
vs. Input Power
Output Power
Efficiency
Description
The PTF 10107 is a 5–watt
GOLDMOS
FET intended for large signal
applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with
11 dB gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
10107
A-1234569845
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10111 | 6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 12 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10120 | 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10111 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.5 GHz GOLDMOS Field Effect Transistor |
| PTF10112 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10119 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10120 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10122 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
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