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參數(shù)資料
| 型號： | PTF10120 |
| 廠商： | ERICSSON |
| 英文描述： | 120 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 120瓦，1.8-2.0 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 420K |
| 代理商： | PTF10120 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 120 W, I
DQ
= 1.2 A Total, f = 1.99 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 1.2 A Total, f = 1.99 GHz
—all phase angles at frequency of test)
G
ps
10
11
—
dB
P-1dB
120
—
—
Watts
h
D
—
40
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10120
120 Watts, 1.8–2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20250
0
30
60
90
120
150
0
3
6
9
12
15
18
Input Power (Watts)
0
20
40
60
80
100
V
DD
= 28 V
I
DQ
= 1.2 A Total
f = 1990 MHz
Typical Output Power vs. Input Power
Output Power
Efficiency
O
E
Description
The PTF 10120 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for CDMA and TDMA
applications from 1.8 to 2.0 GHz. It is rated at 120 watts power output.
Nitride surface passivation and full gold metallization ensure excellent
device lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 1.99 GHz, 28 V
- Output Power = 120 Watts Min
- Power Gain = 11 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
A-1234569849
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10122 | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10122 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10125 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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