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參數(shù)資料
| 型號： | PTF10134 |
| 廠商： | ERICSSON |
| 英文描述： | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 100瓦，2.1-2.2 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 318K |
| 代理商： | PTF10134 |
1
PTF 10134
100 Watts, 2.1–2.2 GHz
GOLDMOS
Field Effect Transistor
Package 20250
0
20
40
60
80
100
120
0
2
4
Input Power (Watts)
6
8
10
12
14
O
0
8
16
24
32
40
48
E
V
DD
= 28 V
I
DQ
= 1.3 A Total
f = 2170 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
Description
The PTF 10134 is an internally matched
GOLDMOS
FET intended
for WCDMA applications from 2.1 to 2.2 GHz. It is rated at 100 watts
power output and operates with 10 dB typical gain. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 100 Watts Min
- Power Gain = 10 dB Typ
Full Gold Metallization
Excellent Thermal Stability
100% Lot Traceability
1234569953A
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Power Output at 1.5 dB Compression
(V
DD
= 28 V, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 100 W, I
DQ
= 1.3 A Total, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 80 W, I
DQ
= 1.3 A Total, f = 2.17 GHz
—all phase angles at frequency of test)
G
ps
9.5
10
—
dB
P-1dB
100
—
—
Watts
D
—
37
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10135 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136 | 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10137 | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10138 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10139 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10135 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10136 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136R3 | 制造商:Infineon Technologies AG 功能描述: |
| PTF10137 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10138 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
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