參數(shù)資料
型號(hào): PTF10135
廠商: ERICSSON
英文描述: 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
中文描述: 5瓦,2.0 GHz的GOLDMOS場(chǎng)效應(yīng)晶體管
文件頁(yè)數(shù): 1/6頁(yè)
文件大?。?/td> 245K
代理商: PTF10135
e
1
PTF 10135
5 Watts, 2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20249
0
1
2
3
4
5
6
7
8
0
0.1
0.2
0.3
0.4
0.5
Input Power (Watts)
O
V
DD
= 26 V
I
DQ
= 70 mA
f = 2000 MHz
Typical Output Power vs. Input Power
Description
The PTF 10135 is a common source N-channel enhancement-mode
lateral MOSFET intended for large signal applications from 1.0 to 2.0
GHz. It is rated at 5 watts minimum output power. Nitride surface
passivation and gold metallization ensure excellent device lifetime
and reliability. 100% lot traceability is standard.
Guaranteed Performance at 1.99 GHz, 26 V
- Output Power = 5 Watts Min
- Power Gain = 11 dB Min
Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain-Source Voltage
V
DSS
65
Vdc
Gate-Source Voltage
V
GS
±20
Vdc
Operating Junction Temperature
T
J
200
°C
Total Device Dissipation at Tflange = 25°C
Above 25°C derate by
P
D
39
0.22
Watts
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (Tflange = 70°C)
R
q
JC
4.5
°C/W
A-1234569953
相關(guān)PDF資料
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PTF10136 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PTF10136 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
PTF10136R3 制造商:Infineon Technologies AG 功能描述:
PTF10137 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor
PTF10138 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor
PTF10139 制造商:ERICSSON 制造商全稱(chēng):Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor