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參數(shù)資料
| 型號： | PTF10136 |
| 廠商： | ERICSSON |
| 英文描述： | 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 6瓦，1.0 GHz的GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 205K |
| 代理商： | PTF10136 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 1 W, I
DQ
= 70 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 70 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 70 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 6 W, I
DQ
= 70 mA, f = 960 MHz—
all phase angles at frequency of test)
G
ps
18
19
—
dB
P-1dB
6.0
7.5
—
Watts
50
57
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
0
2
4
6
8
10
0.00
0.05
0.10
0.15
Input Power (Watts)
O
0
14
28
42
56
70
E
X
V
DD
= 28 V
I
DQ
= 70 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency
Output Power
PTF 10136
6 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
Package 20244
Performance at 960 MHz, 28 Volts
- Output Power = 6 Watts
- Efficiency = 57% Typ
- Power Gain = 19 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10136 is a 6–watt
GOLDMOS
FET intended for large signal
amplifier applications from to 1.0 GHz. It operates at 57% efficiency
with 19 dB typical gain. Nitride surface passivation and full gold
metallization ensure excellent device lifetime and reliability.
A-1234569935
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10137 | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10138 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10139 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10149 | 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor |
| PTF10153 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10136R3 | 制造商:Infineon Technologies AG 功能描述: |
| PTF10137 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10138 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10139 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10147 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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