- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378088 > PTF10153 (ERICSSON) 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | PTF10153 |
| 廠商： | ERICSSON |
| 英文描述： | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 60瓦，1.8-2.0 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 108K |
| 代理商： | PTF10153 |
1
PTF 10153
60 Watts, 1.8–2.0 GHz
GOLDMOS
Field Effect Transistor
Package 20248
0
10
20
30
40
50
60
70
80
90
0
2
4
6
8
10
12
Input Power (Watts)
O
0
10
20
30
40
50
60
E
V
DD
= 28 V
I
DQ
= 650mA
f = 1880 MHz
Typical Output Power & Efficiency
vs. Input Power
Description
The PTF 10153 is an internally matched 60–watt
GOLDMOS
FET
intended for CDMA and TDMA applications from 1.8 to 2.0 GHz. It
operates with 40% efficiency and 11.5 dB minimum gain. Nitride
surface passivation and full gold metallization ensure excellent de-
vice lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 1805, 1843, 1880
MHz, 28 V
- Output Power = 60 Watts Min
- Power Gain = 11.5 dB Min
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
G
ps
11.5
—
—
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 650 mA, f = 1880 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
P-1dB
60
—
—
Watts
D
40
—
—
%
Return Loss
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA,
f = 1805, 1843, 1880 MHz)
—
—
—
–9.5
dB
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 650 mA, f = 1805
—all phase angles at frequency of test)
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
A-1234569953
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10154 | 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10160 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10161 | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF10162 | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10193 | 12 Watts, 860-960 MHz GOLDMOS⑩ Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10154 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10157 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10160 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10161 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF10162 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。