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參數(shù)資料
| 型號： | PTF10139 |
| 廠商： | ERICSSON |
| 英文描述： | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 60瓦，860-960兆赫GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 115K |
| 代理商： | PTF10139 |
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 500 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 60 W, I
DQ
= 500 mA, f = 960 MHz—
all phase angles at frequency of test)
G
ps
11.5
12.5
—
dB
P-1dB
60
—
—
Watts
50
55
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10139
60 Watts, 860-960 MHz
GOLDMOS
Field Effect Transistor
0
10
20
30
40
50
60
70
0
1
2
3
4
Input Power (Watts)
O
10
20
30
40
50
60
70
80
D
X
V
DD
= 28 V
I
DQ
= 500 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
A-1234562700
Also available in
Package
20256
Package
20251
A-1234561199
Description
The PTF 10139 is a
GOLDMOS
FET intended for amplifier applica-
tions to 860-960 MHz. This 60–watt device operates at 55% effi-
ciency with 12.5 dB typical gain. Nitride surface passivation and full
gold metallization ensure excellent device lifetime and reliability.
Performance at 960 MHz, 28 Volts
- Output Power = 60 Watts Min
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
Back Side Common Source
100% Lot Traceability
Available in Package 20256 as PTF 10138
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10149 | 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor |
| PTF10153 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10154 | 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10160 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10161 | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10147 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10149 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10153 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10154 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10157 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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