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參數(shù)資料
| 型號： | PTF10149 |
| 廠商： | ERICSSON |
| 英文描述： | 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 70瓦，921-960兆赫GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 215K |
| 代理商： | PTF10149 |
1
0
20
40
60
80
100
0
1
2
3
Input Power (Watts)
O
10
20
30
40
50
60
E
x
V
DD
= 26 V
I
DQ
= 750 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Output Power
Efficiency
RF Specifications
(100% tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 26 V, I
DQ
= 750 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 26 V, P
OUT
= 70 W, I
DQ
= 750 mA, f = 921 MHz
—all phase angles at frequency of test)
G
pe
15.0
16.0
—
dB
P-1dB
70
75
—
Watts
47
50
—
%
—
—
5:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Description
The PTF 10149 is an internally matched 70–watt
GOLDMOS
FET
intended for cellular and GSM amplifier applications from 921 to
960 MHz. It operates with 50% efficiency and 16 dB typical gain.
Nitride surface passivation and full gold metallization ensure excel-
lent device lifetime and reliability.
PTF 10149
70 Watts, 921–960 MHz
GOLDMOS
Field Effect Transistor
10149
A-1234569935
Package 20252
INTERNALLY MATCHED
Performance at 960 MHz, 26 Volts
- Output Power = 70 Watts
- Power Gain = 16.0 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10153 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10154 | 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10160 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10161 | 165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
| PTF10162 | 18 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10153 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10154 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10157 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10160 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10161 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 869-894 MHz GOLDMOS Field Effect Transistor |
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