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參數(shù)資料
| 型號： | PTF10137 |
| 廠商： | ERICSSON |
| 英文描述： | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 12瓦，1.0 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 175K |
| 代理商： | PTF10137 |
e
1
PTF 10137
12 Watts, 1.0 GHz
GOLDMOS
Field Effect Transistor
10137
A-1234569942
0
5
10
15
20
0.0
0.2
0.4
0.6
Input Power (Watts)
O
0
20
40
60
80
E
V
DD
= 28 V
I
DQ
= 160 mA
f = 960 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency (%)
Output Power (W)
Package 20244
Performance at 960 MHz, 28 Volts
- Output Power = 12 Watts
- Efficiency = 60% Typ
- Power Gain = 18 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Surface Mountable
Available in Tape and Reel
100% Lot Traceability
Description
The PTF 10137 is a 12 Watt LDMOS FET intended for large signal
amplifier applications to 1.0 GHz. It operates at 60% efficiency with
18 dB of gain. Nitride surface passivation and full gold metallization
ensure excellent device lifetime and reliability.
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Common Source Power Gain
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
Power Output at 1 dB Compressed
(V
DD
= 28 V, I
DQ
= 160 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 12 W, I
DQ
= 160 mA, f = 960 MHz
—all phase angles at frequency of test)
G
ps
16.5
18
—
dB
P-1dB
12
15
—
Watts
h
55
60
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10138 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10139 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10149 | 70 Watts, 921-960 MHz GOLDMOS Field Effect Transistor |
| PTF10153 | 60 Watts, 1.8-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10154 | 85 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10138 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10139 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10147 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10149 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10153 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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