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參數(shù)資料
| 型號： | PTF10125 |
| 廠商： | ERICSSON |
| 英文描述： | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 135瓦，1.4-1.6 GHz的GOLDMOS場效應晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 291K |
| 代理商： | PTF10125 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 1.3 A Total,
f = 1.50, 1.55 GHz)
G
ps
11.5
12.5
—
dB
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.3 A Total, f = 1.50, 1.55 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 135 W, I
DQ
= 1.3 A Total, f = 1.5 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 67.5 W, I
DQ
= 1.3 A Total, f = 1.5 GHz
—all phase angles at frequency of test)
P-1dB
135
150
—
Watts
h
D
35
40
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10125
135 Watts, 1.4–1.6 GHz
GOLDMOS
Field Effect Transistor
Package 20250
0
20
40
60
80
100
120
140
160
180
200
0
3
6
9
12
15
Input Power (Watts)
O
V
DD
= 28 V
I
DQ
= 1.3 A Total
f = 1500 MHz
Typical Output Power vs. Input Power
Description
The PTF 10125 is an internally matched, common source N-channel
enhancement-mode lateral MOSFET intended for linear driver and
final applications from 1.4 to 1.6 GHz, such as DAB/DRB. It is rated
at 135 watts minimum power outpt. Nitride surface passivation and
full gold metallization ensure excellent device lifetime and reliability.
INTERNALLY MATCHED
Performance at 1.5 GHz, 28 V
- Output Power = 135 Watts Min
- Power Gain = 12.5 dB Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
A-1234569935
相關PDF資料 |
PDF描述 |
|---|---|
| PTF10133 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136 | 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10137 | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10133 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點:37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10136 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136R3 | 制造商:Infineon Technologies AG 功能描述: |
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