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參數(shù)資料
| 型號： | PTF10133 |
| 廠商： | ERICSSON |
| 英文描述： | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 85瓦，860-960兆赫GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 177K |
| 代理商： | PTF10133 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 1.0 A, f = 894 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 1.0 A, f = 894 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 1.0 A, f = 894 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 85 W, I
DQ
= 1.0 A, f = 894 MHz
—all phase angles at frequency of test)
G
ps
12.5
13.5
—
dB
P-1dB
85
90
—
Watts
h
45
50
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Description
The PTF 10133 is an internally matched 85 watt LDMOS FET
intended for cellular, GSM and D-AMPS applications. This device
operates at 50% efficiency with 13.5 dB of gain. Full gold metallization
ensures excellent device lifetime and reliability.
PTF 10133
85 Watts, 860–960 MHz
GOLDMOS
Field Effect Transistor
A1234569947
0
20
40
60
80
100
120
0
1
2
3
4
5
6
Input Power (Watts)
O
0
10
20
30
40
50
60
E
V
DD
= 28.0 V
I
DQ
= 1.0 A
f = 894 MHz
Typical Output Power vs. Input Power
Output Power
Efficiency
Package 20248
INTERNALLY MATCHED
Performance at 894 MHz, 28 Volts
- Output Power = 85 Watts
- Power Gain = 13.5 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10134 | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136 | 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10137 | 12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10138 | 60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10134 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10136 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136R3 | 制造商:Infineon Technologies AG 功能描述: |
| PTF10137 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:12 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
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