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參數(shù)資料
| 型號： | PTF10122 |
| 廠商： | ERICSSON |
| 英文描述： | 50 Watts WCDMA, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| 中文描述： | 50瓦的WCDMA，2.1-2.2 GHz的GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 263K |
| 代理商： | PTF10122 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 15 W, I
DQ
= 600 mA, f = 2.11 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 50 W, I
DQ
= 600 mA, f = 2.17 GHz
—all phase angles at frequency of test)
G
ps
10.0
11.0
—
dB
P-1dB
50
—
—
Watts
h
D
30
35
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10122
50 Watts WCDMA, 2.1–2.2 GHz
GOLDMOS
Field Effect Transistor
Package 20248
0
10
20
30
40
50
60
0
1
2
3
4
5
6
Input Power (Watts)
O
0
10
20
30
40
50
E
V
DD
= 28 V
I
DQ
= 600 mA
f = 2.17 GHz
Typical Output Power vs. Input Power
Description
The PTF 10122 is an internally matched common source N-channel
enhancement-mode lateral MOSFET intended for WCDMA applications
from 2.1 to 2.2 GHz. It is rated at 50 watts power output, with 11 dB of
gain. Nitride surface passivation and full gold metallization ensure ex-
cellent device lifetime and reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 50 Watts Min
- Gain = 11.0 dB Typ
- Efficiency = 35% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
Excellent Thermal Stability
100% Lot Traceability
A-1234569946
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10125 | 135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10136 | 6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10125 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:135 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10133 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10134 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:100 Watts, 2.1-2.2 GHz GOLDMOS Field Effect Transistor |
| PTF10135 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10136 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:6 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
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