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參數(shù)資料
| 型號(hào)： | PTF10048 |
| 廠商： | ERICSSON |
| 英文描述： | 30 Watts, 2.1-2.2 GHz, W-CDMA GOLDMOS Field Effect Transistor |
| 中文描述： | 30瓦，2.1-2.2千兆赫的W - CDMA GOLDMOS場(chǎng)效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 233K |
| 代理商： | PTF10048 |
1
PTF 10048
30 Watts, 2.1–2.2 GHz, W-CDMA
GOLDMOS
Field Effect Transistor
A-1234569940
Package 20237
0
10
20
30
40
0
1
2
3
4
Input Power (Watts)
O
5
15
25
35
45
E
X
V
DD
= 28 V
I
DQ
= 425 mA
f = 2170 MHz
Typical Output Power & Efficiency vs. Input Power
Efficiency
Output Power
Description
The PTF 10048 is an internally matched 30–watt
GOLDMOS
FET
intended for WCDMA applications from 2.1 to 2.2 GHz. It operates at
40% efficiency with 10.5 dB typical gain. Nitride surface passivation
and full gold metallization ensure excellent device lifetime and
reliability.
INTERNALLY MATCHED
Guaranteed Performance at 2.17 GHz, 28 V
- Output Power = 30 Watts Min
- Gain = 10.5 dB Typ at 30 Watts
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 10 W, I
DQ
= 425 mA, f = 2.11 & 2.17 GHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 425 mA, f = 2.17 GHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 30 W, I
DQ
= 425 mA, f = 2.17 GHz
—all phase angles at frequency of test)
G
ps
10
11
—
dB
P-1dB
30
36
—
Watts
30
40
—
%
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10052 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10053 | 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10065 | 30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 5 Watts, 2.0 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10052 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10053 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10065 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.93-1.99 GHz GOLDMOS Field Effect Transistor |
| PTF10100 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:165 Watts, 860-900 MHz LDMOS Field Effect Transistor |
| PTF10107 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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