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參數(shù)資料
| 型號(hào)： | PTF10020 |
| 廠商： | ERICSSON |
| 英文描述： | 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 125瓦，860-960兆赫GOLDMOS場(chǎng)效應(yīng)晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 313K |
| 代理商： | PTF10020 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
CQ
= 1.4 A Total, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, P
OUT
= 125 W, I
DQ
= 1.4 A Total, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, P
OUT
= 125 W(PEP), I
DQ
= 1.4 A Total,
f = 959.9, 960 MHz—all phase angles at frequency of test)
G
ps
11.0
12.5
—
dB
P-1dB
125
130
—
Watts
h
50
55
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
PTF 10020
125 Watts, 860–960 MHz
GOLDMOS
Field Effect Transistor
0
25
50
75
100
125
150
0
1
2
3
4
5
6
7
Input Power (Watts)
O
V
DD
= 28 V
I
DQ
= 1.4 A Total
Typical Output Power vs. Input Power
900 MHz
960 MHz
860 MHz
Package 20240
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 125 Watts
- Power Gain = 12.5 dB Typ
- Efficiency = 55% Typ
Full Gold Metallization
Silicon Nitride Passivated
Back Side Common Source
100% Lot Traceability
Description
The PTF 10020 is an internally matched, 125 Watt LDMOS FET
intended for large signal amplifier applications from 860 to 960 MHz.
Nitride surface passivation and gold metallization ensure excellent
device lifetime and reliability.
A-1234569813
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10021 | 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10031 | 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10043 | 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor |
| PTF10045 | 30 Watts, 1.60-1.65 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10021 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10031 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10041 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
| PTF10043 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測(cè)試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
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