- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄378087 > PTF10019 (ERICSSON) 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor PDF資料下載
參數(shù)資料
| 型號： | PTF10019 |
| 廠商： | ERICSSON |
| 英文描述： | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| 中文描述： | 70瓦，860-960兆赫GOLDMOS場效應(yīng)晶體管 |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 322K |
| 代理商： | PTF10019 |
e
1
RF Specifications
(100% Tested)
Characteristic
Symbol
Min
Typ
Max
Units
Gain
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
Power Output at 1 dB Compression
(V
DD
= 28 V, I
DQ
= 600 mA, f = 960 MHz)
Drain Efficiency
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz)
Load Mismatch Tolerance
(V
DD
= 28 V, Pout = 70 W, I
DQ
= 600 mA, f = 960 MHz
—all phase angles at frequency of test)
G
pe
13.0
14.5
—
dB
P-1dB
70
75
—
Watts
h
45
50
—
%
Y
—
—
10:1
—
All published data at T
CASE
= 25°C unless otherwise indicated.
Description
The PTF 10019 is an internally matched, 70 Watt LDMOS FET intended
for cellular, GSM, and D-AMPS applications in the 860 to 960 MHz
range. Nitride surface passivation and full gold metallization ensure
excellent device lifetime and reliability.
PTF 10019
70 Watts, 860–960 MHz
GOLDMOS
Field Effect Transistor
10019
A-1234568955
0
20
40
60
80
0.0
1.0
Input Power (Watts)
2.0
3.0
4.0
10
18
26
34
42
50
58
66
74
Typical Output Power vs. Input Power
V
DD
= 28 V
I
DQ
= 600 mA
f = 960 MHz
Output Power
Efficiency
O
E
Package 20237
INTERNALLY MATCHED
Performance at 960 MHz, 28 Volts
- Output Power = 70 Watts
- Power Gain = 14.5 dB Typ
- Efficiency = 50% Typ
Full Gold Metallization
Silicon Nitride Passivated
Excellent Thermal Stability
100% Lot Traceability
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF10020 | 125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10021 | 30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10031 | 50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10043 | 12 Watts, 1.9-2.0 GHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF10020 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:125 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10021 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:30 Watts, 1.4-1.6 GHz GOLDMOS Field Effect Transistor |
| PTF10031 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:50 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10036 | 制造商:ERICSSON 制造商全稱:Ericsson 功能描述:85 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
| PTF10041 | 功能描述:射頻放大器 RF LDMOS Transistor RoHS:否 制造商:Skyworks Solutions, Inc. 類型:Low Noise Amplifier 工作頻率:2.3 GHz to 2.8 GHz P1dB:18.5 dBm 輸出截獲點(diǎn):37.5 dBm 功率增益類型:32 dB 噪聲系數(shù):0.85 dB 工作電源電壓:5 V 電源電流:125 mA 測試頻率:2.6 GHz 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:QFN-16 封裝:Reel |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。