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參數(shù)資料
| 型號： | PTF080901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 10/10頁 |
| 文件大小： | 205K |
| 代理商： | PTF080901E |
10
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Your feedback will help us to continuously improve the quality of this document.
Please send your proposal (including a reference to this document) to:
highpowerRF@infineon.com
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+1 877 465 3667 (1-877-GOLDMOS) USA
or +1 408 776 0600 International
PTF080901
Confidential - Limited Internal
Revision History:
Previous Version:
Page
1,8,9
6,7
2004-04-05
2004-01-02, Data Sheet
Data Sheet
Subjects (major changes since last revision)
Add information about PTF080901F, new package outline diagrams
Circuit information updated.
GOLDMOS
is a registered trademark of Infineon Technologies AG.
Edition 2004-04-05
Published by Infineon Technologies AG,
St.-Martin-Strasse 53,
81669 München, Germany
Infineon Technologies AG 2003.
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as a guarantee of
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits,
descriptions and charts stated herein.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon
Technologies Office (
www.infineon.com/rfpower
).
Warnings
Due to technical requirements components may contain dangerous substances. For information on the types in question
please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of
Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support
device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it
is reasonable to assume that the health of the user or other persons may be endangered.
相關PDF資料 |
PDF描述 |
|---|---|
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF10007 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10009 | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| PTF10015 | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
| PTF081301EF-03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
| PTF081301F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
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