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參數(shù)資料
| 型號(hào)： | PTF080901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 2/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | PTF080901E |
Data Sheet
2
2004-04-05
PTF080901
Typical Performance
(measurements taken in production test fixture)
Modulation Spectrum
P
OUT
= 40 W, f = 959.8 MHz
0.5
0.7
0.9
1.1
1.3
1.5
1.7
1.9
2.1
0.47
0.57
0.67
0.77
0.87
0.97
Quiescent Current (A)
E
.
-100
-90
-80
-70
-60
-50
-40
-30
-20
M
EVM
400 KHz
600 KHz
0
1
2
3
4
5
6
7
8
9
36
38
40
42
44
46
48
50
Output Power (dBm)
E
.
0
10
20
30
40
50
60
70
80
90
D
EDGE EVM Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 959.8 MHz
EVM
Efficiency
DC Characteristics
at T
CASE
= 25°C unless otherwise indicated
Characteristic
Conditions
Symbol
Min
Typ
Max
Unit
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
DS
= 10 μA
V
(BR)DSS
65
—
—
V
Drain Leakage Current
V
DS
= 28 V, V
GS
= 0 V
I
DSS
—
—
1.0
μA
On–State Resistance
V
GS
= 10 V, V
DS
= 0.1 V
R
DS(on)
—
0.1
—
Operating Gate Voltage
V
DS
= 28 V, I
DQ
= 650 mA
V
GS
2.5
3.2
4
V
Gate Leakage Current
V
GS
= 10 V, V
DS
= 0 V
I
GSS
—
—
1.0
μA
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain–Source Voltage
V
DSS
65
V
Gate–Source Voltage
V
GS
–0.5 to +12
V
Junction Temperature
T
J
200
°C
Total Device Dissipation
Above 25°C derate by
P
D
335
1.9
W
W/°C
Storage Temperature Range
T
STG
–40 to +150
°C
Thermal Resistance (T
CASE
= 70°C)
R
θ
JC
0.52
°C/W
All published data at T
CASE
= 25°C unless otherwise indicated.
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相關(guān)代理商/技術(shù)參數(shù) |
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| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
| PTF081301EF-03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
| PTF081301F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
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