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參數(shù)資料
| 型號： | PTF080901E |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| 中文描述： | LDMOS射頻功率場效應(yīng)晶體管90瓦，869-960兆赫 |
| 文件頁數(shù)： | 5/10頁 |
| 文件大?。?/td> | 205K |
| 代理商： | PTF080901E |
Series show current.
PTF080901
Typical Performance
(cont.)
Three–Carrier CDMA 2000 Performance
V
DD
= 28 V, I
DQ
= 700 mA, f = 880 MHz
15
20
25
30
35
40
45
50
39
40
41
42
43
44
45
Output Power (dBm), Avg.
D
-65
-62
-59
-56
-53
-50
-47
-44
A
P
Efficiency
ALT Up
ACP Low
ACP Up
Bias Voltage vs. Temperature
Voltage normalized to typical gate voltage.
0.96
0.97
0.98
0.99
1.00
1.01
1.02
1.03
-20
0
20
40
60
80
100
Case Temperature (oC)
N
1.50 A
3.00 A
4.50 A
6.00 A
7.50 A
9.00 A
All published data at T
CASE
= 25°C unless otherwise indicated.
Broadband Circuit Impedance
0
0
0.1
-
A
E
L
N
G
H
S
O
W
A
D
E
N
-
-
W
A
E
L
N
G
T
S
O
W
A
D
O
D
-
.
860 MHz
860 MHz
980 MHz
980 MHz
Z Load
Z Source
Z
0
= 50
Frequency
Z Source
Z Load
MHz
R
jX
R
jX
860
2.50
–1.09
1.98
–1.08
920
2.67
–0.43
1.99
–0.32
940
2.79
–0.35
1.87
–0.21
960
2.94
0.12
1.85
0.27
980
2.91
0.37
1.79
0.53
Z Source
Z Load
G
S
D
Data Sheet
5
2004-04-05
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| PTF080901F | LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF10007 | 35 Watts, 1.0 GHz GOLDMOS Field Effect Transistor |
| PTF10009 | 85 Watts, 1.0 GHz GOLDMOS⑩ Field Effect Transistor |
| PTF10015 | 50 Watts, 300-960 MHz GOLDMOS Field Effect Transistor |
| PTF10019 | 70 Watts, 860-960 MHz GOLDMOS Field Effect Transistor |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PTF080901EF_DS2A | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF080901F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:LDMOS RF Power Field Effect Transistor 90 W, 869-960 MHz |
| PTF081301E | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
| PTF081301EF-03 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130W,869-960MHz |
| PTF081301F | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Thermally-Enhanced High Power RF LDMOS FETs 130 W, 869 - 960 MHz |
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