參數(shù)資料
型號(hào): PN2000A
文件頁(yè)數(shù): 97/105頁(yè)
文件大?。?/td> 2030K
代理商: PN2000A
NPN RF Transistor
This device is designed for use as RF amplifiers, oscillators and
multipliers with collector currents in the 1.0 mA to 30 mA range.
Sourced from Process 43.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN918
350
2.8
125
357
*MMBT918
225
1.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
556
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
30
3.0
50
V
V
V
mA
°
C
-55 to +150
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
MMBT918
C
B
E
SOT-23
Mark: 3B
PN918
CBE
TO-92
Discrete POWE R & Signal
Technologies
1997 Fairchild Semiconductor Corporation
相關(guān)PDF資料
PDF描述
PN200RM Microprocessor Supervisory Circuits; Package: PDIP; No of Pins: 16; Temperature Range: 0°C to +70°C
PN200A PNP General Purpose Amplifier
PN202SQ PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 30M | DOME-3.0
PN202SR PHOTOTRANSISTOR | DARLINGTON | 800NM PEAK WAVELENGTH | 30M | DOME-3.0
PNZ202S(PN202S) 光デバイス - 受光素子 - ダーリントンフォトトランジスタ
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PN2002 制造商:Piergiacomi Sud 功能描述:G.P. SNIPE NOSE PLIER
PN-2002/P 制造商:HAKKO Corporation 功能描述:
PN-2002-D 制造商:HAKKO Corporation 功能描述:
PN2003 制造商:Piergiacomi Sud 功能描述:G.P. SERRATED JAW PLIER
PN2004PA005 制造商:Hubbell Wiring Device-Kellems 功能描述:LINKOSITY MALE R/A 20A 4W, 5FT