參數(shù)資料
型號(hào): PN2000A
文件頁數(shù): 32/105頁
文件大?。?/td> 2030K
代理商: PN2000A
P
NPN RF Amplifier
(continued)
Electrical Characteristics
TA= 25°C unless otherwise noted
OFF CHARACTERISTICS
V
CEO(
sus
)
Collector-Emitter Sustaining Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CBO
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 3.0 mA, I
B
= 0
I
C
= 100
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CB
= 15 V, I
E
= 0
V
CB
= 15 V, T
A
= 150
°
C
15
30
2.0
V
V
V
μ
A
nA
0.05
5.0
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 8.0 mA, V
CE
= 10 V
20
200
SMALL SIGNAL CHARACTERISTICS
f
T
Current Gain - Bandwidth Product
I
= 8.0 mA, V
CE
= 10 V,
f = 100 MHz
V
CB
= 10 V, I
E
= 0, f = 1.0 MHz
V
CB
= 0, I
E
= 0, f = 1.0 MHz
V
BE
= 0.5 V, I
C
= 0, f = 140 MHz
I
= 8.0 mA, V
CE
= 10 V,
f = 1.0 kHz
I
C
= 8.0 mA, V
CE
= 10 V,
f = 79.8 MHz
600
1500
MHz
C
obo
Output Capacitance
1.7
3.0
2.0
250
pF
pF
pF
C
ibo
h
fe
Input Capacitance
Small-Signal Current Gain
20
rb’C
C
Collector Base Time Constant
8.0
25
pS
FUNCTIONAL TEST
G
pe
Amplifier Power Gain
I
C
= 8.0 mA, V
CB
= 10 V,
f = 200 MHz
14
26
dB
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
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