參數(shù)資料
型號(hào): PN2000A
文件頁(yè)數(shù): 42/105頁(yè)
文件大?。?/td> 2030K
代理商: PN2000A
P
NPN General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 50 V, I
E
= 0,
V
CE
= 50 V, I
E
= 0, T
A
= 65
°
C
45
60
5.0
V
V
V
nA
μ
A
50
1.0
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 10 V, I
C
= 150 mA
V
CE
= 10 V, I
C
= 500 mA
I
C
= 150 mA, I
B
= 15 mA
40
15
120
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.22
V
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 10 V, f = 140 kHz
I
C
= 50 mA, V
CE
= 5.0 V,
f = 100 MHz
V
CE
= 15 V, I
C
= 0,
R
g
= 140
, f = 30 MHz,
RL = 260
V
CE
= 15 V, I
= 0,
R
= 140
, f = 30 MHz,
RL = 260
8.0
pF
1.5
G
pe
Amplifier Power Gain
10
dB
η
Collector Efficiency
60
%
*
Pulse Test: Pulse Width
300
μ
s, Duty Cycle
2.0%
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