參數(shù)資料
型號: PN2000A
文件頁數(shù): 15/105頁
文件大?。?/td> 2030K
代理商: PN2000A
P
PN2369A
MMPQ2369
MMBT2369A
NPN Switching Transistor
This device is designed for high speed saturation switching at collector
currents of 10 mA to 100 mA. Sourced from Process 21.
Absolute Maximum Ratings*
TA = 25°C unless otherwise noted
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
15
40
4.5
200
V
V
V
mA
°
C
-55 to +150
Thermal Characteristics
TA = 25°C unless otherwise noted
Symbol
Characteristic
Max
Units
PN2369A
350
2.8
125
357
MMBT2369A*
225
1.8
MMPQ2369
1,000
8.0
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
°
C/W
°
C/W
R
θ
JC
R
θ
JA
Effective 4 Die
Each Die
556
125
240
CBE
TO-92
C
B
E
SOT-23
Mark: 1S
C
CCCCCCC
SOIC-16
EB
EBEBEB
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Discrete POWER & Signal
Technologies
1997 Fairchild Semiconductor Corporation
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