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| 型號(hào)： | PN2000A |
| 文件頁(yè)數(shù)： | 88/105頁(yè) |
| 文件大?。?/td> | 2030K |
| 代理商： | PN2000A |
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P
PNP General Purpose Amplifier
(continued)
Electrical Characteristics
TA = 25°C unless otherwise noted
OFF CHARACTERISTICS
V
(BR)CEO
Collector-Emitter Breakdown Voltage*
V
(BR)CBO
Collector-Base Breakdown Voltage
V
(BR)EBO
Emitter-Base Breakdown Voltage
V
(BR)CES
Collector-Emitter Breakdown Voltage
I
B
Base Cutoff Current
I
CES
Collector Cutoff Current
Symbol
Parameter
Test Conditions
Min
Max
Units
I
C
= 10 mA, I
B
= 0
I
C
= 10
μ
A, I
E
= 0
I
E
= 10
μ
A, I
C
= 0
I
C
= 10
μ
A
V
CE
= 15 V
V
CE
= 15 V
V
CE
= 15 V, T
A
= 65
°
C
30
30
5.0
30
V
V
V
V
nA
nA
μ
A
25
25
25
ON CHARACTERISTICS*
h
FE
DC Current Gain
V
CE
= 1.0 V, I
C
= 100
μ
A
V
CE
= 1.0 V, I
C
= 1.0 mA
V
CE
= 1.0 V, I
C
= 10 mA
V
CE
= 1.0 V, I
C
= 50 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 1.0 mA, I
B
= 0.1 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
100
150
150
30
300
V
CE(
sat
)
Collector-Emitter Saturation Voltage
0.13
0.14
0.30
0.75
0.90
1.10
V
V
V
V
V
V
V
BE(
sat
)
Base-Emitter Saturation Voltage
0.70
0.75
SMALL SIGNAL CHARACTERISTICS
C
ob
Output Capacitance
C
ib
Input Capacitance
h
fe
Small-Signal Current Gain
V
CB
= 10 V, f = 1.0 MHz
V
EB
= 0.5 V, f = 1.0 MHz
I
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CE
= 20 V, I
C
= 10 mA
f = 80 MHz
V
CE
= 5.0 V, I
C
= 1.0 mA,
R
S
= 100
,
f = 100 MHz
V
CE
= 5.0 V, I
C
= 100
μΑ
,
R
S
= 1.0 k
4.5
8.0
pF
pF
4.5
rb’Cc
Collector-Base Time Constant
50
ps
NF
Noise Figure
6.0
4.0
dB
dB
SWITCHING CHARACTERISTICS
Turn-on Time
Delay Time
Rise Time
Turn-off Time
Storage Time
Fall Time
*
Pulse Test: Pulse Width
≤
300
μ
s, Duty Cycle
≤
2.0%
t
on
t
d
t
r
t
off
t
s
t
f
V
CC
= 10 V, I
C
= 50 mA,
I
B1
= 5.0 mA
40
15
40
150
140
40
ns
ns
ns
ns
ns
ns
V
CC
= 10 V, I
C
= 50 mA
I
B1
= I
B2
= 5.0 mA
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