參數(shù)資料
型號(hào): PN2000A
文件頁數(shù): 3/105頁
文件大?。?/td> 2030K
代理商: PN2000A
P
Symbol
Parameter
Value
Units
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
Operating and Storage Junction Temperature Range
45
75
6.0
500
V
V
V
mA
°
C
-55 to +150
MMBT100
MMBT100A
PN100
PN100A
NPN General Purpose Amplifier
This device is designed for general purpose amplifier applications
at collector currents to 300 mA. Sourced from Process 10.
Absolute Maximum Ratings*
TA=25°C unless otherwise noted
NOTES
:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Discrete POWE R & Signal
T echnologies
Thermal Characteristics
TA= 25°C unless otherwise noted
*
Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Symbol
Characteristic
Max
Units
PN100A
625
5.0
83.3
200
*MMBT100A
350
2.8
P
D
Total Device Dissipation
Derate above 25
°
C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
mW
mW/
°
C
°
C/W
°
C/W
R
θ
JC
R
θ
JA
357
CBE
TO-92
C
B
E
SOT-23
Mark: NA / NA1
1997 Fairchild Semiconductor Corporation
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