參數資料
型號: PIP201-12M
廠商: NXP SEMICONDUCTORS
元件分類: 模擬信號調理
英文描述: SPECIALTY ANALOG CIRCUIT, PQCC68
封裝: 10 X 10 X 0.85 MM, PLASTIC, HVQFN-68
文件頁數: 2/20頁
文件大小: 333K
代理商: PIP201-12M
Philips Semiconductors
PIP201-12M
DC to DC converter powertrain
Product data
Rev. 02 — 18 July 2002
10 of 21
9397 750 09833
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
The typical dissipation in each PIP201-12M as a function of output current, is given in
Figure 6. At 500 KHz and 12.5 A output current, the dissipation in each PIP201-12M
is 2.7 W. The typical thermal resistance from junction to ambient is given in Table 4.
With thermal vias and forced air cooling, the thermal resistance of each PIP201-12M
from junction to ambient is15 K/W. Assuming a maximum ambient temperature of
55
°C, the maximum junction temperature (T
j(max)) is given by:
(1)
The thermal resistance between the junction and the printed-circuit board is 5 K/W.
Therefore, the maximum printed-circuit board temperature (Tpcb(max)) is given by:
(2)
11.2 Advantages of an integrated driver
One problem in the design of low-voltage, high-current DC to DC converters using
discrete components, is stray inductance between the various circuit elements.
Stray inductance in the gate drive circuit increases the switching times of the
MOSFETs and causes high-frequency oscillation of the gate voltage.
Stray inductance in the high-current loop between VDDO and VSSO causes switching
losses and electromagnetic interference. In discrete designs, high-frequency electric
and magnetic elds radiate from PCB tracks and couple into adjacent circuits.
By integrating the power MOSFETs and their drive circuits into a single package,
stray inductance is virtually eliminated, resulting in a compact, efcient design.
In discrete designs, the delays in the MOSFET drivers must be long enough to
ensure no cross-conduction even when using the slowest MOSFETs. Use of an
integrated driver allows the propagation delays in the MOSFET drivers to be precisely
matched to the MOSFETs. This minimizes switching losses and eliminates
cross-conduction whilst allowing the circuit to operate at a higher frequency.
11.3 External connection of power and signal lines
A major benet of the PIP201-12M module is the ability to switch the internal power
MOSFETs faster than a DC-DC converter built from discrete components. This
reduces switching losses and increases system efciency but it also results in higher
transient voltages on the device supply lines (VDDO and VSSO). This is due to the high
rate of change of current (dI/dt) through the combined parasitic inductance of the pcb
tracks and the decoupling capacitors.
To minimize the amplitude of these transients, decoupling capacitors must be placed
between VDDO and VSSO, as close as possible to the device pins. Low inductance,
chip ceramic capacitors are recommended.
T
j max
()
P
tot
R
th j
a
()
×
T
amb
+
2.7
15
55
+
×
95.5
°C
==
=
T
pcb max
()
T
j max
()
P
tot
R
th j
pcb
()
×
95.5
2.7
5
×
82
°C
==
=
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相關代理商/技術參數
參數描述
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