參數(shù)資料
型號： PHU11NQ10T
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： TrenchMOS⑩ standard level FET
中文描述： 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝： PLASTIC, I2PAK-3
文件頁數(shù)： 2/12頁
文件大?。?/td> 84K
代理商： PHU11NQ10T
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
Product data
Rev. 01 — 28 May 2002
2 of 12
9397 750 09528
Koninklijke Philips Electronics N.V. 2002. All rights reserved.
5.
Quick reference data
6.
Limiting values
Table 2:
Symbol Parameter
V
DS
drain-source voltage (DC)
I
D
drain current (DC)
P
tot
total power dissipation
T
j
junction temperature
R
DSon
drain-source on-state resistance
Quick reference data
Conditions
25
°
C
≤
T
j
≤
175
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C
Typ
-
-
-
-
150
Max
100
10.9
57.7
175
180
Unit
V
A
W
°
C
m
V
GS
= 10 V; I
D
= 9 A; T
j
= 25
°
C
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
100
100
±
20
10.9
7.7
43.6
57.7
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V;
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 10 V;
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s;
Figure 3
T
mb
= 25
°
C;
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; t
p
≤
10
μ
s
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
-
-
10.9
43.6
A
A
unclamped inductive load; I
D
= 3.2 A;
t
p
= 0.2 ms; V
DD
≤
15 V; R
GS
= 50
;
V
GS
= 10 V; starting T
j
= 25
°
C
-
35
mJ
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