參數(shù)資料
型號: PHU11NQ10T
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: TrenchMOS⑩ standard level FET
中文描述: 10.9 A, 100 V, 0.18 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251
封裝: PLASTIC, I2PAK-3
文件頁數(shù): 12/12頁
文件大?。?/td> 84K
代理商: PHU11NQ10T
Koninklijke Philips Electronics N.V. 2002.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 28 May 2002
Document order number: 9397 750 09528
Contents
Philips Semiconductors
PHU11NQ10T
TrenchMOS standard level FET
1
2
3
4
5
6
7
7.1
8
9
10
11
12
13
14
Description
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features
. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Pinning information
. . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data
. . . . . . . . . . . . . . . . . . . . . 2
Limiting values
. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics
. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance. . . . . . . . . . . . . . 4
Characteristics
. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline
. . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history
. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status
. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Trademarks
. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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