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參數(shù)資料
| 型號： | PC34704BEP |
| 廠商： | FREESCALE SEMICONDUCTOR INC |
| 元件分類： | 電源管理 |
| 英文描述： | 8-CHANNEL POWER SUPPLY MANAGEMENT CKT, QCC56 |
| 封裝： | 7 X 7 MM, 1 MM HEIGHT, 0.40 MM PITCH, ROHS COMPLIANT, QFN-56 |
| 文件頁數(shù)： | 4/50頁 |
| 文件大小： | 2010K |
| 代理商： | PC34704BEP |
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Analog Integrated Circuit Device Data
12
Freescale Semiconductor
34704
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
PVIN5 Leakage Current (Off State) @25°C
IPVIN5_LKG
-
1.0
A
SW5D Leakage Current (Off State) @25°C
ISW5D_LKG
-
1.0
A
SW5U Leakage Current (Off State) @25°C
ISW5U_LKG
-
1.0
A
REGULATOR 6(10)
Output Voltage Range
VOUT
5.0(11)
15
V
Output Accuracy
-
-4.0
-
4.0
%
Line/Load Regulation(9)
REGLN/LD
-1.0
-
1.0
%
Dynamic Voltage Scaling Range
VDYN
-10
-
10
%
Dynamic Voltage Scaling Step Size
VDYN_STEP
-
2.5
-
%
Continuous Output Current(9)
IOUT
-
50
60
mA
Li-Ion Battery Over-current Limit (Detected in low side FET)
ILIM_ION
-
3.0
-
A
Li-Ion Battery Short-circuit Current Limit (Detected in the Blocking FET)
ISHORT_ION
-
4.5
-
A
Li-Ion Battery Over-current Limit Accuracy
-
-20
-
20
%
N-CH Switch Power MOSFET RDS(ON)
RDS(ON)-SW
-
200
-
m
N-CH Synch. Power MOSFET RDS(ON)
RDS(ON)-SY
-
600
-
m
N-CH Shutdown Power MOSFET RDS(ON)
RDS(ON)-SH
-
200
-
m
Discharge MOSFET RDS(ON)
RDS(ON)-DIS
-
70
-
Thermal Shutdown Threshold(9)
TSD
-
170
-
°C
Thermal Shutdown Hysteresis(9)
TSD-HYS
-
25
-
°C
SW6 Leakage Current (Off State) @25°C
ISW6_LKG
-
1.0
A
REGULATOR 7(10)
Output Voltage Range (Li-Ion Battery)
VOUT
-5.0
-7.0
-9.0
V
Output Accuracy
-
-2.0
-
2.0
%
Line/Load Regulation(9)
REGLN/LD
-1.0
-
1.0
%
Continuous Output Current(9)
IOUT
-
50
60
mA
Discharge MOSFET RDS(ON)
RDS(ON)-DIS
-
55
-
Gate Drive Voltage High Level (@ -50mA)
VIN-VOH
-
2.8
TBD
V
Gate Drive Voltage Low Level (@ 50mA)
VOL
-
1.1
TBD
V
VREF7 Output Voltage
VREF7
-
1.5
-
V
VREF7 Voltage Accuracy
-
1.43
-
1.57
V
VREF7 Output Load Regulation (10
A to 1.0mA)
REGLD
1.43
-
1.57
V
Notes
9.
Guaranteed by Design
10.
Available only on the 34704A
11.
When battery voltage is higher than 5.0V, a diode implementation like the one displayed on VG is necessary.
Table 4. Static Electrical Characteristics (continued)
Characteristics noted under conditions 2.7V
≤ VIN ≤ 5.5V, -20°C ≤ TA ≤ 85°C, GND = 0V, unless otherwise noted. Typical
values noted reflect the approximate parameter means at TA = 25°C under nominal conditions, unless otherwise noted.
Characteristic
Symbol
Min
Typ
Max
Unit
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