參數(shù)資料
型號： PC28F640J3C-150
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲器（J3）
文件頁數(shù)： 61/72頁
文件大?。?/td> 905K
代理商： PC28F640J3C-150
256-Mbit J3 (x8/x16)
Datasheet
61
Figure 20. Byte/Word Program Flowchart
Start
Write 40H,
Address
Write Data and
Address
Read Status
Register
SR.7 =
Full Status
Check if Desired
Byte/Word
Program Complete
Read Status
Register Data
(See Above)
Voltage Range Error
Device Protect Error
Programming Error
Byte/Word
Program
Successful
SR.3 =
SR.1 =
SR.4 =
FULL STATUS CHECK PROCEDURE
Bus
Operation
Write
Write
Standby
1. Toggling OE# (low to high to low) updates the status register. This
can be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR full status check can be done after each program operation, or
after a sequence of programming operations.
Write FFH after the last program operation to place device in read
array mode.
Bus
Operation
Standby
Standby
Toggling OE# (low to high to low) updates the status register. This can
be done in place of issuing the Read Status Register command.
Repeat for subsequent programming operations.
SR.4, SR.3 and SR.1 are only cleared by the Clear Status Register
command in cases where multiple locations are programmed before
full status is checked.
If an error is detected, clear the status register before attempting retry
or other error recovery.
0
1
1
0
1
0
1
0
Command
Setup Byte/
Word Program
Byte/Word
Program
Comments
Data = 40H
Addr = Location to Be Programmed
Data = Data to Be Programmed
Addr = Location to Be Programmed
Check SR.7
1 = WSM Ready
0 = WSM Busy
Command
Comments
Check SR.3
1 = Programming to Voltage Error
Detect
Check SR.4
1 = Programming Error
Read
(Note 1)
Status Register Data
Standby
Check SR.1
1 = Device Protect Detect
RP# = V
, Block Lock-Bit Is Set
Only required for systems
implemeting lock-bit configuration.
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參數(shù)描述
PC28F640J3D75 制造商:Intel 功能描述:
PC28F640J3D-75 制造商:Intel 功能描述:NOR Flash, 4M x 16, 64 Pin, Plastic, BGA
PC28F640J3D75A 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F640J3D75B 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標準包裝:136 系列:- 格式 - 存儲器:RAM 存儲器類型:SRAM - 同步，DDR II 存儲容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F640J3D75D 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 75ns 64-Pin EZBGA Tray
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