參數(shù)資料
型號(hào)： PC28F640J3C-150
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁(yè)數(shù)： 6/72頁(yè)
文件大小： 905K
代理商： PC28F640J3C-150
Contents
6
Datasheet
07/27/01
-009
Added Figure 4,
3 Volt Intel StrataFlash
Memory VF BGA Package (32 Mbit)
Added Figure 5,
3 Volt Intel StrataFlash
Memory VF BGA Mechanical
Specifications
Updated Operating Temperature Range to Extended (Section 6.1 and Table 22)
Reduced t
EHQZ
to 35 ns. Reduced t
WHEH
to 0 ns
Added parameter values for –40 °C operation to Lock-Bit and Suspend Latency
Updated V
LKO
and V
PENLK
to 2.2 V
Removed Note #4, Section 6.4 and Section 6.6
Minor text edits
10/31/01
-010
Added notes under lead descriptions for VF BGA Package
Removed 3.0 V - 3.6 V Vcc, and Vccq columns under AC Characteristics
Removed byte mode read current row un DC characteristics
Added ordering information for VF BGA Package
Minor text edits
03/21/02
-011
Changed datasheet to reflect the best known methods
Updated max value for Clear Block Lock-Bits time
Minor text edits
12/12/02
-012
Added nomenclature for J3C (0.18 μm) devices.
01/24/03
-013
Added 115 ns access speed 64 Mb J3C device. Added 120 ns access speed 128
Mb J3C device. Added “TE” package designator for J3C TSOP package.
12/09/03
-014
Revised Asynchronous Page Read description. Revised Write-to-Buffer flow
chart. Updated timing waveforms. Added 256-Mbit J3C pinout.
1/3/04
-015
Added 256Mbit device timings, device ID, and CFI information. Also corrected
VLKO specification.
1/23/04
-016
Corrected memory block count from 257 to 255.
1/23/04
-016
Memory block count fix.
5/19/04
-018
Restructured the datasheet layout.
7/7/04
-019
Added lead-free part numbers and 8-word page information.
11/23/04
-020
Added Note to DC Voltage Characteristics table; “Speed Bin” to Read Operations
table; Corrected format for AC Waveform for Reset Operation figure; Corrected
“R” and “8W” headings in Enhanced Configuration Register table because they
were transposed; Added 802 and 803 to ordering information and corrected 56-
Lead TSOP combination number.
3/24/05
-021
Corrected ordering information.
Date of
Revision
Version
Description
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC28F640J3D75 制造商:Intel 功能描述:
PC28F640J3D-75 制造商:Intel 功能描述:NOR Flash, 4M x 16, 64 Pin, Plastic, BGA
PC28F640J3D75A 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
PC28F640J3D75B 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類(lèi)別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類(lèi)型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤(pán) 其它名稱(chēng):71P71804S200BQ
PC28F640J3D75D 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 75ns 64-Pin EZBGA Tray
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