參數(shù)資料
型號(hào)： PC28F640J3C-150
廠商： Intel Corp.
英文描述： Intel StrataFlash Memory (J3)
中文描述： 英特爾StrataFlash存儲(chǔ)器（J3）
文件頁(yè)數(shù)： 40/72頁(yè)
文件大?。?/td> 905K
代理商： PC28F640J3C-150
256-Mbit J3 (x8/x16)
40
Datasheet
Table 18. Status Register Definitions
WSMS
ESS
ECLBS
PSLBS
VPENS
PSS
DPS
R
bit 7
bit 6
bit 5
bit 4
bit 3
bit2
bit 1
bit 0
High Z
When
Busy
Status Register Bits
Notes
No
Yes
Yes
Yes
Yes
Yes
Yes
Yes
SR.7 = WRITE STATE MACHINE STATUS
1 = Ready
0 = Busy
SR.6 = ERASE SUSPEND STATUS
1 = Block Erase Suspended
0 = Block Erase in Progress/Completed
SR.5 = ERASE AND CLEAR LOCK-BITSSTATUS
1 = Error in Block Erasure or Clear Lock-Bits
0 = Successful Block Erase or Clear Lock-Bits
SR.4 = PROGRAM AND SET LOCK-BIT STATUS
1 = Program Error / Error in Setting Lock-Bit
0 = Successful Program/Set Block Lock Bit
SR.3 = PROGRAMMING VOLTAGE STATUS
1 = Low Programming Voltage Detected, Operation
Aborted
0 = Programming Voltage OK
SR.2 = PROGRAM SUSPEND STATUS
1 = Program suspended
0 = Program in progress/completed
SR.1 = DEVICE PROTECT STATUS
1 = Block Lock-Bit Detected, Operation Abort
0 = Unlock
SR0 = RESERVED FOR FUTURE ENHANCEMENTS
Check STS or SR.7 to determine block erase,
program, or lock-bit configuration completion.
SR[6:0] are not driven while SR.7 = “0.”
If both SR.5 and SR.4 are “1”s after a block erase or
lock-bit configuration attempt, an improper
command sequence was entered.
SR.3 does not provide a continuous programming
voltage level indication. The WSM interrogates and
indicates the programming voltage level only after
Block Erase, Program, Set Block Lock-Bit, or Clear
Block Lock-Bits command sequences.
SR.1 does not provide a continuous indication of
block lock-bit values. The WSM interrogates the
block lock-bits only after Block Erase, Program, or
Lock-Bit configuration command sequences. It
informs the system, depending on the attempted
operation, if the block lock-bit is set. Read the block
lock configuration codes using the Read Identifier
Codes command to determine block lock-bit status.
SR0 is reserved for future use and should be
masked when polling the Status Register.
Table 19. Extended Status Register Definitions
WBS
Reserved
bit 7
Bits 6 -- 0
High Z
When
Busy
Status Register Bits
Notes
No
Yes
XSR.7 = WRITE BUFFER STATUS
1 = Write buffer available
0 = Write buffer not available
XSR.6–XSR0 = RESERVED FOR FUTURE
ENHANCEMENTS
After a Buffer-Write command, XSR.7 = 1 indicates
that a Write Buffer is available.
SR[6:0] are reserved for future use and should be
masked when polling the Status Register.
相關(guān)PDF資料
PDF描述
PC28F640J3A-110 Intel StrataFlash Memory (J3)
PC28F640J3A-115 Intel StrataFlash Memory (J3)
PC28F256J3A-115 Intel StrataFlash Memory (J3)
PC28F256J3A-120 Intel StrataFlash Memory (J3)
PC28F128J3A-150 KPTC 32C 32#20 SKT PLUG
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
PC28F640J3D75 制造商:Intel 功能描述:
PC28F640J3D-75 制造商:Intel 功能描述:NOR Flash, 4M x 16, 64 Pin, Plastic, BGA
PC28F640J3D75A 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F640J3D75B 功能描述:IC FLASH 64MBIT 75NS 64EZBGA RoHS:是 類別:集成電路 (IC) >> 存儲(chǔ)器 系列:StrataFlash™ 產(chǎn)品變化通告:Product Discontinuation 26/Apr/2010 標(biāo)準(zhǔn)包裝:136 系列:- 格式 - 存儲(chǔ)器:RAM 存儲(chǔ)器類型:SRAM - 同步，DDR II 存儲(chǔ)容量:18M（1M x 18） 速度:200MHz 接口:并聯(lián) 電源電壓:1.7 V ~ 1.9 V 工作溫度:0°C ~ 70°C 封裝/外殼:165-TBGA 供應(yīng)商設(shè)備封裝:165-CABGA（13x15） 包裝:托盤 其它名稱:71P71804S200BQ
PC28F640J3D75D 制造商:Micron Technology Inc 功能描述:Flash Mem Parallel 3V/3.3V 64M-Bit 8M x 8/4M x 16 75ns 64-Pin EZBGA Tray
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*