參數(shù)資料
型號(hào): P28F001BX-T70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 70 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數(shù): 4/33頁
文件大?。?/td> 436K
代理商: P28F001BX-T70
28F001BX-T/28F001BX-B
290406–4
Figure 4. PLCC Lead Configuration
APPLICATIONS
The 28F001BX flash ‘boot block’ memory augments
the non-volatility, in-system electrical erasure and
reprogrammability of Intel’s standard flash memory
by offering four separately erasable blocks and inte-
grating a state machine to control erase and pro-
gram functions. The specialized blocking architec-
ture and automated programming of the 28F001BX
provide a full-function, non-volatile flash memory
ideal for a wide range of applications, including PC
boot/BIOS memory, minimum-chip embedded pro-
gram memory and parametric data storage. The
28F001BX combines the safety of a hardware-pro-
tected 8-KByte boot block with the flexibility of three
separately reprogrammable blocks (two 4-KByte pa-
rameter blocks and one 112-KByte code block) into
one versatile, cost-effective flash memory. Addition-
ally, reprogramming one block does not affect code
stored in another block, ensuring data integrity.
The flexibility of flash memory reduces costs
throughout the life cycle of a design. During the early
stages of a system’s life, flash memory reduces pro-
totype development and testing time, allowing the
system designer to modify in-system software elec-
trically versus manual removal of components. Dur-
ing production, flash memory provides flexible firm-
ware for just-in-time configuration, reducing system
inventory and eliminating unnecessary handling and
less reliable socketed connections. Late in the life
cycle, when software updates or code ‘‘bugs’’ are
often unpredictable and costly, flash memory reduc-
es update costs by allowing the manufacturers to
send floppy updates versus a technician. Alterna-
tively, remote updates over a communication link are
possible at speeds up to 9600 baud due to flash
memory’s fast programming time.
4
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