參數(shù)資料
型號: P28F001BX-T70
廠商: INTEL CORP
元件分類: PROM
英文描述: 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY
中文描述: 128K X 8 FLASH 12V PROM, 70 ns, PDIP32
封裝: 0.620 X 1.640 INCH, PLASTIC, DIP-32
文件頁數(shù): 21/33頁
文件大?。?/td> 436K
代理商: P28F001BX-T70
28F001BX-T/28F001BX-B
AC CHARACTERISTICSDRead-Only Operations
(1)
E28F001BX-150
TE28F001BX-150
N28F001BX-150
TN28F001BX-150
P28F001BX-150
Unit
E28F001BX-120
N28F001BX-120
P28F001BX-120
Versions
(2)
V
CC
g
10%
Symbol
Parameter
Notes
Min
Max
Min
Max
t
AVAV
t
RC
Read Cycle Time
120
150
ns
t
AVQV
t
ACC
Address to Output Delay
120
150
ns
t
ELQV
t
CE
CE
Y
to Output Delay
3
120
150
ns
t
PHQV
t
PWH
RP
Y
High to Output Delay
600
600
ns
t
GLQV
t
OE
OE
Y
to Output Delay
3
50
55
ns
t
ELQX
t
LZ
CE
Y
to Output Low Z
4
0
0
ns
t
EHQZ
t
HZ
CE
Y
High to Output High Z
4
55
55
ns
t
GLQX
t
OLZ
OE
Y
to Output Low Z
4
0
0
ns
t
GHQZ
t
DF
OE
Y
High to Output High Z
4
30
30
ns
t
OH
Output Hold from
Addresses, CE
Y
or OE
Y
Change, Whichever is First
4
0
0
ns
NOTES:
1. See AC Input/Output Reference Waveform for timing measurements.
2. Model Number Prefixes: E
e
TSOP (Standard Pinout), N
e
PLCC, P
e
PDIP, T
e
Extended Temperature. Refer to
standard test configuration.
3. OE
Y
may be delayed up to t
CE
–t
OE
after the falling edge of CE
Y
without impact on t
CE
.
4. Sampled, not 100% tested.
21
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