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參數資料
| 型號： | P28F001BX-T70 |
| 廠商： | INTEL CORP |
| 元件分類： | PROM |
| 英文描述： | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| 中文描述： | 128K X 8 FLASH 12V PROM, 70 ns, PDIP32 |
| 封裝： | 0.620 X 1.640 INCH, PLASTIC, DIP-32 |
| 文件頁數： | 24/33頁 |
| 文件大?。?/td> | 436K |
| 代理商： | P28F001BX-T70 |
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28F001BX-T/28F001BX-B
AC CHARACTERISTICSDWrite/Erase/Program Operations
(1, 9)
Versions
V
CC
g
10%
(10)
28F001BX-120
28F001BX-150
Unit
Symbol
Parameter
Notes
Min
Max
Min
Max
t
AVAV
t
WC
Write Cycle Time
120
150
ns
t
PHWL
t
PS
RP
Y
High Recovery to WE
Y
Going Low
2
480
480
ns
t
ELWL
t
CS
CE
Y
Setup to WE
Y
Going Low
10
10
ns
t
WLWH
t
WP
WE
Y
Pulse Width
50
50
ns
t
PHHWH
t
PHS
RP
Y
V
HH
Setup to WE
Y
Going High
V
PP
Setup to WE
Y
Going High
Address Setup to WE
Y
Going High
2
100
100
ns
t
VPWH
t
VPS
2
100
100
ns
t
AVWH
t
AS
3
50
50
ns
t
DVWH
t
DS
Data Setup to WE
Y
Going High
4
50
50
ns
t
WHDX
t
DH
Data Hold from WE
Y
High
10
10
ns
t
WHAX
t
AH
Address Hold from WE
Y
High
10
10
ns
t
WHEH
t
CH
t
WPH
WE
Y
Pulse Width High
CE
Y
Hold from WE
Y
High
10
10
ns
t
WHWL
50
50
ns
t
WHQV1
Duration of Programming Operation
5, 6, 7
15
15
m
s
t
WHQV2
Duration of Erase Operation (Boot)
5, 6, 7
1.3
1.3
sec
t
WHQV3
Duration of Erase Operation (Parameter)
5, 6, 7
1.3
1.3
sec
t
WHQV4
Duration of Erase Operation (Main)
5, 6, 7
3.0
3.0
sec
t
WHGL
Write Recovery before Read
0
0
m
s
t
QVVL
t
VPH
V
PP
Hold from Valid SRD
RP
Y
V
HH
Hold from Valid SRD
2, 6
0
0
ns
t
QVPH
t
PHH
2, 7
0
0
ns
t
PHBR
Boot-Block Relock Delay
2
100
100
ns
PROM Programmer Specifications
Versions
V
CC
g
10%
28F001BX-120
28F001BX-150
Unit
Symbol
Parameter
Notes
Min
Max
Min
Max
t
GHHWL
OE
Y
V
HH
Setup to WE
Y
Going Low
OE
Y
V
HH
Hold from WE
Y
High
2, 8
480
480
ns
t
WHGH
2, 8
480
480
ns
NOTES:
1. Read timing characteristics during erase and program operations are the same as during read-only operations. Refer to
AC Characteristics for Read-Only Operations.
2. Sampled, not 100% tested.
3. Refer to Table 3 for valid A
IN
for byte programming or block erasure.
4. Refer to Table 3 for valid D
IN
for byte programming or block erasure.
5. The on-chip Write State Machine incorporates all program and erase system functions and overhead of standard Intel
Flash Memory, including byte program and verify (programming) and block precondition, precondition verify, erase and erase
verify (erasing).
6. Program and erase durations are measured to completion (SR.7
e
1). V
PP
should be held at V
PPH
until determination of
program/erase success (SR.3/4/5
e
0).
7. For boot block programming and erasure, RP
Y
should be held at V
HH
until determination of program/erase success
(SR.3/4/5
e
0).
8. Alternate boot block access method.
9. Erase/Program Cycles on extended temperature products is 10,000 cycles.
10. See standard test configuration.
24
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PDF描述 |
|---|---|
| P28F001BX-T90 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-B120 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-B150 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-B70 | 1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F001BX-B90 | DB9 MALE TO DB9 FEMALE AME |
相關代理商/技術參數 |
參數描述 |
|---|---|
| P28F001BX-T90 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:1-MBIT (128K x 8) BOOT BLOCK FLASH MEMORY |
| P28F002BC-T120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F002BC-T80 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F002BC 2-MBIT (256K X 8) BOOT BLOCK FLASH MEMORY |
| P28F010120 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| P28F010-120 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:28F010 1024K (128K X 8) CMOS FLASH MEMORY |
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