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參數(shù)資料
| 型號： | NTD4815N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 35 A(30V, 35A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，35甲（30V的，35A條，功率MOSFET的） |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD4815N |
NTD4815N
http://onsemi.com
4
TYPICAL PERFORMANCE CURVES
3.2 V
3 V
4 V
5.5 V to 10 V
5 V
5
0.020
15
0.005
0
30
1.5
1.0
0.5
10,000
I
D
,
100,000
0
30
2
1
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
I
D
,
0
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 1. OnRegion Characteristics
Figure 2. Transfer Characteristics
I
D
,
2
4
0.020
0.010
0
5
Figure 3. OnResistance vs. GatetoSource
Voltage
V
GS
, GATETOSOURCE VOLTAGE (VOLTS)
Figure 4. OnResistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
R
D
,
R
D
,
Figure 5. OnResistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (
°
C)
Figure 6. DraintoSource Leakage Current
vs. Drain Voltage
V
DS
, DRAINTOSOURCE VOLTAGE (VOLTS)
R
D
,
(
50
50
25
0
25
75
125
100
2
3
16
12
32
4
3
V
DS
≥
10 V
T
J
= 25
°
C
T
J
= 55
°
C
T
J
= 125
°
C
V
GS
= 4.5 V
175
V
GS
= 0 V
I
D
= 30 A
V
GS
= 10 V
50
T
J
= 175
°
C
T
J
= 125
°
C
40
0
4
5
T
J
= 25
°
C
20
10
2.0
10
1000
4
1
0
6
12
0.030
20
0.010
25
4.5 V
3.4 V
3.6 V
3.8 V
40
10
20
60
30
20
80
10
50
I
D
= 30 A
T
J
= 25
°
C
7
8
9
0.005
0.015
0.025
V
GS
= 11.5 V
150
100
T
J
= 25
°
C
0.015
10
5
60
70
6
7
8
9
3
10
11
0.030
0.025
8
24
28
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD4815N-1G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4815N-35G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4815N-35G | 制造商:ON Semiconductor 功能描述:MOSFET N 30V 3 I-PAK |
| NTD4815NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK |
| NTD4815NH-1G | 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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