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參數(shù)資料
| 型號： | NTD4815N |
| 廠商： | ON SEMICONDUCTOR |
| 英文描述： | Power MOSFET 30 V, 35 A(30V, 35A, 功率MOSFET) |
| 中文描述： | 功率MOSFET 30五，35甲（30V的，35A條，功率MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 81K |
| 代理商： | NTD4815N |
Semiconductor Components Industries, LLC, 2006
November, 2006 Rev. 2
1
Publication Order Number:
NTD4815N/D
NTD4815N
Power MOSFET
30 V, 35 A, Single NChannel, DPAK/IPAK
Features
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
These are PbFree Devices
Applications
CPU Power Delivery
DCDC Converters
High Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise stated)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage
Continuous Drain
Current R
JA
(Note 1)
Power Dissipation
R
JA
(Note 1)
Continuous Drain
Current R
JA
(Note 2)
Power Dissipation
R
JA
(Note 2)
Continuous Drain
Current R
JC
(Note 1)
Power Dissipation
R
JC
(Note 1)
Pulsed Drain
Current
Current Limited by Package
Operating Junction and Storage
Temperature
Source Current (Body Diode)
Drain to Source dV/dt
Single Pulse DraintoSource Avalanche
Energy (V
DD
= 24 V, V
GS
= 10 V,
I
L
= 11 A
pk
, L = 1.0 mH, R
G
= 25
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
V
DSS
V
GS
I
D
30
±
20
8.5
V
V
A
Steady
State
T
A
= 25
°
C
T
A
= 85
°
C
6.5
T
A
= 25
°
C
P
D
1.92
W
T
A
= 25
°
C
ID
6.9
A
T
A
= 85
°
C
5.3
T
A
= 25
°
C
P
D
1.26
W
T
C
= 25
°
C
I
D
35
A
T
C
= 85
°
C
27
T
C
= 25
°
C
P
D
32.6
W
t
p
=10 s
T
A
= 25
°
C
I
DM
87
A
T
A
= 25
°
C
I
DmaxPkg
T
J
,
T
STG
I
S
dV/dt
EAS
35
A
°
C
55 to
+175
27
6
60.5
A
V/ns
mJ
T
L
260
°
C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
MARKING DIAGRAMS
& PIN ASSIGNMENTS
http://onsemi.com
V
(BR)DSS
R
DS(ON)
MAX
I
D
MAX
30 V
15 m @ 10 V
35 A
25 m @ 4.5 V
G
S
NCHANNEL MOSFET
D
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
Y
4
1
Gate
2
Drain3
Source
4
Drain
4
Drain
2
Drain
1
Gate
3
Source
4
Drain
2
Drain
1
Gate
3
Source
Y
4
Y
4
Y
WW
4815N = Device Code
G
= PbFree Package
= Year
= Work Week
CASE 369C
DPAK
(Bent Lead)
STYLE 2
CASE 369D
IPAK
(Straight Lead
DPAK)
1 2
3
4
123
4
CASE 369AC
3 IPAK
(Straight Lead)
123
4
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|---|---|
| NTD4815N-1G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4815N-35G | 功能描述:MOSFET NFET 30V 35A 15MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD4815N-35G | 制造商:ON Semiconductor 功能描述:MOSFET N 30V 3 I-PAK |
| NTD4815NH | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET 30 V, 35 A, Single N-Channel, DPAK/IPAK |
| NTD4815NH-1G | 功能描述:MOSFET NFET DPAK 30V 40A 13MOHM RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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