參數(shù)資料
型號(hào)： NTD50N03R
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 25 V, 45 A(25V, 45A, 功率MOSFET)
中文描述： 7.8 A, 25 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁數(shù)： 1/8頁
文件大?。?/td> 79K
代理商： NTD50N03R
Semiconductor Components Industries, LLC, 2005
November, 2005 Rev. 3
1
Publication Order Number:
NTD50N03R/D
NTD50N03R
Power MOSFET
25 V, 45 A, Single NChannel, DPAK
Features
Planar Technology
Low R
DS(on)
to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
PbFree Packages are Available
Applications
VCORE DCDC Buck Converter Applications
Optimized for High Side Switching
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
V
GS
I
D
25
V
GatetoSource Voltage
20
V
Continuous Drain
Current (R
JA
)
(Note 1)
Steady
State
T
A
= 25
°
C
9.2
A
T
A
= 85
°
C
7.2
Power Dissipation
(R
JA
) (Note 1)
T
A
= 25
°
C
P
D
2.1
W
Continuous Drain
Current (R
JA
)
(Note 2)
T
A
= 25
°
C
I
D
7.8
A
T
A
= 85
°
C
6.0
Power Dissipation
(R
JA
) (Note 2)
T
A
= 25
°
C
P
D
1.5
W
Continuous Drain
Current (R
JC
)
(Note 1)
T
C
= 25
°
C
I
D
45
A
T
C
= 85
°
C
35
Power Dissipation
(R
JC
) (Note 1)
T
C
= 25
°
C
P
D
50
W
Pulsed Drain Current
T
A
= 25
°
C,
t
p
= 10 s
T
A
= 25
°
C
I
DM
90
A
Current Limited by
Package
I
DmaxPkg
32
A
Operating Junction and Storage
Temperature
T
J
, T
stg
55 to
175
°
C
Source Current (Body Diode)
I
S
45
A
DraintoSource (dv/dt)
dv/dt
8.0
V/ns
Single Pulse DraintoSource Avalanche
Energy (T
J
= 25
°
C, V
DD
= 50 V, V
GS
= 10 V,
I
L
= 6.32 A
pk
, L = 1.0 mH, R
G
= 25 )
Lead Temperature for Soldering Purposes
(1/8
″
from case for 10 s)
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. Surfacemounted on FR4 board using 1 sq in pad, 1 oz Cu.
2. Surfacemounted on FR4 board using the minimum recommended pad size.
E
AS
20
mJ
T
L
260
°
C
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
Y
WW
T50N03R
G
= Year
= Work Week
= Device Code
= PbFree Package
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
CASE 369D
DPAK
(Straight Lead)
STYLE 2
1
Gate
Y
T
N
Y
T
N
25 V
12.5 m @ 10 V
R
DS(on)
TYP
45 A
I
D
MAX
V
(BR)DSS
http://onsemi.com
19 m @ 4.5 V
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
D
S
G
NChannel
123
4
CASE 369AC
3 IPAK
(Straight Lead)
123
4
1 2
3
4
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
NTD50N03R-001 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD50N03R-035 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD50N03R-1 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET
NTD50N03R-1G 功能描述:MOSFET 25V 45A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD50N03R-35 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET
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