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參數(shù)資料
| 型號(hào)： | NTD6N40 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類(lèi)： | JFETs |
| 英文描述： | Power MOSFET 6 Amps, 400 Volts N-Channel(6A,400V,N溝道增強(qiáng)型MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 6 A, 400 V, 1.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | DPAK-3 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大小： | 39K |
| 代理商： | NTD6N40 |
Semiconductor Components Industries, LLC, 2000
November, 2000 – Rev. 1
1
Publication Order Number:
NTD6N40/D
NTD6N40
Preferred Device
Advance Information
Power MOSFET
6 Amps, 400 Volts
N–Channel DPAK
Designed for high voltage, high speed switching applications in
power supplies, converters, power motor controls and bridge circuits.
Features
Higher Current Rating
Lower RDS(on)
Lower Capacitances
Lower Total Gate Charge
Tighter VSD Specifications
Avalanche Energy Specified
Industry Standard DPAK Surface Mount Package
Typical Applications
Switch Mode Power Supplies
PWM Motor Controls
Converters
Bridge Circuits
MAXIMUM RATINGS
(TC = 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain–Source Voltage
Drain–Gate Voltage (RGS = 1.0 M
)
Gate–Source Voltage
– Continuous
– Non–Repetitive (tp
Drain – Continuous
– Continuous @ 100
°
C
– Single Pulse (tp
Total Power Dissipation
Derate above 25
°
C
Total Power Dissipation @ TC = 25
°
C
when mounted with the minimum
recommended pad size
Operating and Storage Temperature
Range
VDSS
VDGR
400
400
Vdc
Vdc
Vdc
10 ms)
VGS
VGSM
ID
ID
IDM
PD
20
40
10
μ
s)
6.0
4.2
21
96
0.77
1.75
Adc
Watts
W/
°
C
W/
°
C
TJ, Tstg
–55 to
150
180
°
C
Single Drain–to–Source Avalanche
Energy – Starting TJ = 25
°
C
(VDD = 100 Vdc, VGS = 10 Vdc,
IL = 6 A, L = 10 mH, RG = 25
)
Thermal Resistance
– Junction–to–Case
– Junction–to–Ambient
– Junction–to–Ambient (Note 1.)
EAS
mJ
R
θ
JC
R
θ
JA
R
θ
JA
TL
1.30
100
71.4
260
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
1. When surface mounted to an FR4 board using the minimum recommended
pad size.
°
C
This document contains information on a new product. Specifications and information
herein are subject to change without notice.
2500 Tape & Reel
6 AMPERES
400 VOLTS
RDS(on) = 1100 m
Device
Package
Shipping
ORDERING INFORMATION
NTD6N40
DPAK
75 Units/Rail
CASE 369A
DPAK
STYLE 2
PIN ASSIGNMENT
http://onsemi.com
N–Channel
D
S
G
NTD6N40–1
DPAK
Preferred
devices are recommended choices for future use
and best overall value.
MARKING
DIAGRAMS
Y
WW
T
= Year
= Work Week
= MOSFET
YWW
T
6N40
Gate
Source
Drain
NTD6N40T4
DPAK
75 Units/Rail
Drain
1
2
3
4
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| NTD6N40/D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Power MOSFET 6 Amps， 400 Volts |
| NTD6N40-001 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD6N40T4 | 制造商:Rochester Electronics LLC 功能描述:- Bulk |
| NTD70N03R | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD70N03R-001 | 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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