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參數(shù)資料
| 型號： | NTD80N02 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | JFETs |
| 英文描述： | Power MOSFET |
| 中文描述： | 80 A, 24 V, 0.0058 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | CASE 369AA-01, DPAK-3 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 82K |
| 代理商： | NTD80N02 |
Semiconductor Components Industries, LLC, 2004
December, 2004 Rev. 4
1
Publication Order Number:
NTD80N02/D
NTD80N02
Power MOSFET
24 V, 80 A, NChannel DPAK
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
PbFree Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
DraintoSource Voltage
GatetoSource Voltage Continuous
Drain Current Continuous @ T
C
= 25
°
C
Drain Current
Single Pulse (t
p
= 10 s)
Total Power Dissipation @ T
C
= 25
°
C
Operating and Storage
Temperature Range
V
DSS
V
GS
I
D
I
DM
P
D
T
J
, T
stg
24
±
20
80*
200
75
55 to
150
733
Vdc
Vdc
Adc
Watts
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
DD
= 24 Vdc, V
GS
= 10 Vdc,
I
L
= 17 Apk, L = 5.0 mH, R
G
= 25
)
Thermal Resistance
JunctiontoCase
JunctiontoAmbient (Note 1)
JunctiontoAmbient (Note 2)
E
AS
mJ
R
θ
JC
R
θ
JA
R
θ
JA
T
L
1.65
67
120
260
°
C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1
″
pad size,
(Cu Area 1.127 in
2
).
2. When surface mounted to an FR4 board using the minimum recommended
pad size, (Cu Area 0.412 in
2
).
*Chip current capability limited by package.
°
C
Y
WW
80N02
= Year
= Work Week
= Device Code
3
Source
2
Drain
4
Drain
1
Gate
3
Source
2
Drain
4
Drain
1
Gate
Y
8
N
Y
8
N
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
CASE 369AA
DPAK
(Surface Mount)
STYLE 2
MARKING DIAGRAMS
& PIN ASSIGNMENTS
1
2
3
4
123
4
CASE 369D
DPAK
(Straight Lead)
STYLE 2
24 V
5.0 m
R
DS(on)
TYP
80 A
I
D
MAX
V
(BR)DSS
NChannel
D
S
G
1 2
3
4
CASE 369C
DPAK
(Surface Mount)
STYLE 2
相關PDF資料 |
PDF描述 |
|---|---|
| NTD80N02G | SHUNT |
| NTD80N02T4 | Power MOSFET |
| NTD80N02T4G | Power MOSFET |
| NTD85N02RG | Power MOSFET 85 Amps, 24 Volts N-Channel DPAK |
| NTD85N02R | Power MOSFET 85 Amps, 24 Volts N-Channel DPAK(85A，24V，N溝道，DPAK封裝的功率MOSFET) |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| NTD80N02-001 | 功能描述:MOSFET 24V 80A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD80N02-032 | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD80N02-032G | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:Power MOSFET |
| NTD80N02-1G | 功能描述:MOSFET NFET DPAK 24V 80A 60mOhm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| NTD80N02G | 功能描述:MOSFET 24V 80A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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