參數(shù)資料
型號(hào)： NTD70N03R
廠商： ON SEMICONDUCTOR
元件分類： JFETs
英文描述： Power MOSFET 72Amps, 25Volts N-Channel DPAK(72A, 25V，N通道，DPAK封裝的功率MOSFET)
中文描述： 32 A, 25 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： CASE 369AA-01, DPAK-3
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 77K
代理商： NTD70N03R
Semiconductor Components Industries, LLC, 2004
April, 2004 Rev. 6
1
Publication Order Number:
NTD70N03R/D
NTD70N03R
Power MOSFET
72 A, 25 V, NChannel DPAK
Features
Planar HD3e Process for Fast Switching Performance
Low R
DS(on)
to Minimize Conduction Loss
Low C
iss
to Minimize Driver Loss
Low Gate Charge
PbFree Packages are Available
MAXIMUM RATINGS
(T
J
= 25
°
C Unless otherwise specified)
Parameter
Symbol
Value
Unit
DraintoSource Voltage
V
DSS
25
V
dc
GatetoSource Voltage Continuous
V
GS
±
20
V
dc
Thermal Resistance JunctiontoCase
Total Power Dissipation @ T
C
= 25
°
C
Drain Current
Continuous @ T
C
= 25
°
C, Chip
Continuous @ T
C
= 25
°
C, Limited by Package
Continuous @ T
A
= 25
°
C, Limited by Wires
Single Pulse (t
p
= 10 s)
R
JC
P
D
I
D
I
D
I
D
I
DM
2.4
62.5
72.0
62.8
32
140
°
C/W
W
A
A
A
A
Thermal Resistance JunctiontoAmbient
(Note 1)
Total Power Dissipation @ T
A
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
80
1.87
12.0
°
C/W
W
A
Thermal Resistance JunctiontoAmbient
(Note 2)
Total Power Dissipation @ T
= 25
°
C
Drain Current Continuous @ T
A
= 25
°
C
R
JA
P
D
I
D
110
1.36
10.0
°
C/W
W
A
Operating and Storage Temperature Range
T
J
, T
stg
55 to
175
°
C
Single Pulse DraintoSource Avalanche
Energy Starting T
J
= 25
°
C
(V
= 30 V
dc
, V
= 10 V
dc
, I
L
= 12 A
pk
,
L = 1 mH, R
G
= 25 )
E
AS
71.7
mJ
Maximum Lead Temperature for Soldering
Purposes, 1/8
″
from Case for 10 Seconds
T
L
260
°
C
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. When surface mounted to an FR4 board using 0.5 sq. in. pad size.
2. When surface mounted to an FR4 board using minimum recommended
pad size.
http://onsemi.com
D
S
G
NChannel
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369AA
Style 2
MARKING DIAGRAMS
70N03
Y
WW
Device Code
= Year
= Work Week
Y
T
N
1 2
3
4
Y
T
N
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369D
Style 2
123
4
25 V
5.6 m
R
DS(on)
TYP
72 A
I
D
MAX
V
(BR)DSS
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
ORDERING INFORMATION
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參數(shù)描述
NTD70N03R-001 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD70N03R-1 制造商:Rochester Electronics LLC 功能描述:- Bulk
NTD70N03R-1G 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD70N03RG 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
NTD70N03RT4 功能描述:MOSFET 25V 75A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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